Allicdata Part #: | 94-2113-ND |
Manufacturer Part#: |
94-2113 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 116A D2PAK |
More Detail: | N-Channel 30V 116A (Tc) 3.8W (Ta), 180W (Tc) Surfa... |
DataSheet: | 94-2113 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 180W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3290pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 7 mOhm @ 60A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 116A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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Modern electronics has come a long way from the days of vacuum tubes and small electrical components. Considered obsolete technology now, these early creations are still crucial in providing the groundwork for much of today\'s electronics. One of the most important components of today’s circuits is the field effect transistor (FET). FETs are closely related to the bipolar junction transistor, but have different characteristics and applications.
FETs have three main components, including the source, gate, and drain. This includes an n-type semiconductor material such as gallium arsenide (GaAs) or silicon (Si) connected between a source and drain. A gate voltage can be applied to the FET’s gate terminal to adjust the resulting current, allowing it to be used as an amplifier or a switch. The source acts as a voltage source when the FET is used as a switch, and acts as resistance when used as an amplifier.
FETs can be divided into two main categories; junction FETs (JFETs) and metal oxide semiconductor FETs (MOSFETs). While both are based on the same principles, their characteristics and application fields differ significantly.
Junction FETs work by using a narrow channel of the semiconductor material between the source and drain. A voltage between the source and drain will cause a current to flow depending on the control potential applied to the gate. When the control voltage is great enough, the channel expands and current is allowed to flow. By controlling this voltage, the amount of current in the device can be controlled.
MOSFETs are based on the same principles as JFETs, but use a different semiconductor material and have different characteristics. MOSFETs employ a gate terminal that is insulated from the other terminals, hence their name. When a voltage is applied to the gate, it causes an electric field which controls the channel’s conductivity by attracting electrons from the channel and destroying or forming a new channel. This prevents current from flowing, allowing the MOSFET to be used as a switch.
Single MOSFETs are the most commonly used FETs, and are generally used as switches, amplifiers, or in power circuits. They operate using the same principles as other FETs, but are made with a single source and drain. When the gate voltage changes, the current flow between the source and drain is also changed. This makes them ideal for use in circuits that require high current capacity or power dissipation. Single MOSFETs are also used as switches in larger circuits, and as amplifiers in audio and RF devices.
In conclusion, FETs are essential components of modern electronics, and are used in a wide range of applications. They work by controlling the current flow between the source and drain using a voltage applied to the gate terminal, and can be divided into two main types; JFETs and MOSFETs.Single MOSFETs are especially useful due to their ability to switch or amplify electrical signals, and are commonly used in audio and RF devices, as well as power circuits.
The specific data is subject to PDF, and the above content is for reference
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