Allicdata Part #: | 94-4156PBF-ND |
Manufacturer Part#: |
94-4156PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 75A DPAK |
More Detail: | N-Channel 20V 75A (Tc) 90W (Tc) Surface Mount D-Pa... |
DataSheet: | 94-4156PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 90W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1996pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 9.5 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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A 94-4156PBF is a type of field-effect transistor (FET), more specifically an N-channel Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). This type of transistor has two major components, a power source such as a battery, and a gate. It is one of the three major types of transistors, the other two being the bipolar junction transistor (BJT) and the unipolar junction transistor (JFET). The 94-4156PBF is unique in that it is both a power source and a signal amplifier. This makes it an ideal choice for a number of applications, such as signal amplification and switching, in addition to its use as a power source.
The 94-4156PBF has one of the highest breakdown voltages available in a FET. This means that it can handle larger currents and voltages, making it ideal for applications that require it. It also has low input capacitance, low gate leakage current, and low power consumption. These qualities make the 94-4156PBF an ideal choice for a variety of applications, including power conversion, motor control, and signal conditioning.
The working principle of the 94-4156PBF is based on the principles of how a MOSFET works. In short, when a voltage is applied to the gate of the transistor, electrons will be attracted towards it. This creates an electric field that can increase or decrease the flow of current through the device. As current flows, the gate voltage will increase or decrease, depending on whether the current is positive or negative. This allows for precise control of current flow and is used in a variety of applications.
One of the main applications of the 94-4156PBF is in the area of power management. It is ideal for use in applications that require both high current and low voltage. For example, it can be used to control the current draw from a battery, and to control the power going to a motor. It can also be used to switch circuits or create PWM (pulse width modulation) signals. Additionally, it can be used in the power supplies of electronic circuits, as it allows for precise current control.
The 94-4156PBF is also commonly used in the control of linear actuators, as well as high-speed switching circuits. It is also well-suited to digital signal processing, as it is capable of very precise current control. Another popular application of the 94-4156PBF is in the switching of high-frequency signals, such as in radios and other wireless devices. In these cases, its ability to handle large currents and relatively low voltages make it ideal.
In summary, the 94-4156PBF is a unique type of transistor that combines the characteristics of a power source and a signal amplifier. It is well-suited to applications requiring precision current control, such as power management, motor control, and signal processing. Its high breakdown voltage and low input capacitance make it ideal for high-frequency applications as well. The principles by which it operates are based on the principles of how a MOSFET works, and it is used in a variety of applications for both power and signal control.
The specific data is subject to PDF, and the above content is for reference
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