94-4762 Allicdata Electronics
Allicdata Part #:

94-4762-ND

Manufacturer Part#:

94-4762

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 27A DPAK
More Detail: N-Channel 55V 27A (Tc) 68W (Tc) Surface Mount D-Pa...
DataSheet: 94-4762 datasheet94-4762 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 45 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The 94-4762 is a single high voltage N-Channel enhancement mode Field Effect Transistor (FET) used in power circuits. It can be used as a switch or an amplifier. As a switch, the 94-4762 is used to interrupt current flow in a power-supplying system, whereas as an amplifier, it can be used to increase the voltage of a system. The 94-4762 is especially useful when its use simplifies the system by reducing the number of components required.

The 94-4762 is a non-volatile MOSFET, meaning it can retain its charge in non-volatile (non-transitory) memory, even when the power is removed from the system. This feature makes the 94-4762 ideal for use in circuits where power must remain on for extended periods of time. It is also used in circuits that require the highest peak current carrying capabilities for extremely long duration.

In order to understand the functionality of the 94-4762, it is important to understand the basic principles of FET technology. FET stands for "Field Effect Transistor," which is a type of transistor that uses the electrical field between two conducting plates to control the flow of current through it. The source and drain electrodes of a FET are connected to two terminals of a power source or load, while the gate electrode is connected to a control voltage.

The 94-4762 has a maximum Drain-Source On-Resistance (RDSon) of 55 mOhms, which is much lower than that of a typical FET. This makes it suitable for use in high power applications, as the current can be switched very quickly without the need for a large current buffer. Additionally, the 94-4762 has very high threshold voltage, which helps to ensure that it will not allow any current flow when its gate voltage is lower than its threshold. This is an important safety feature, as it ensures that no current can leak through when the gate voltage is lower than the threshold.

The 94-4762 is an ideal choice for switched power circuits, such as those used in telecommunications, consumer electronics, automotive and industrial applications. Its non-volatile memory capability makes it ideal for storing settings, such as threshold values, that need to be kept operational even when the power is turned off. The 94-4762 also has a fast switching response, which makes it suitable for applications that require very small and precise current pulses.

In conclusion, the 94-4762 is an excellent choice for high voltage and power applications. Its fast switching and non-volatile memory capabilities make it an ideal choice for power management, as well as reducing the number of components required. Additionally, the 94-4762 has a very high threshold voltage, which helps to ensure that it will not allow any current to flow through when the gate voltage is lower than the threshold. These features make it a valuable addition to any power circuit.

The specific data is subject to PDF, and the above content is for reference

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