A2G35S200-01SR3

Series:	--
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	3.4GHz ~ 3.6GHz
Gain:	16.1dB
Voltage - Test:	48V
Current Rating:	--
Noise Figure:	--
Current - Test:	291mA
Power - Output:	180W
Voltage - Rated:	125V
Package / Case:	NI-400S-2S
Supplier Device Package:	NI-400S-2S

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A2G35S200-01SR3 application field and working principle

A2G35S200-01SR3 is a type of field effect transistor (FET) commonly used in radio frequency (RF) circuitry. It is a negative channel enhancement mode (NMOS) device with a high performance, ultra low resistance design. The transistor is designed for use in mobile phones and other RF applications that require low power consumption.The A2G35S200-01SR3 is constructed of a gallium arsenide (GaAs) substrate, which is advantageous for producing high frequency operation and efficient power transfer. The dielectric material used for the device is Silicon Dioxide (SiO2), which helps in reducing capacitive and inductive coupling between electrodes and substrate. The device also features an advanced source-drain optimization technique, which provides a very low barrier for electron injection, leading to increased frequency operation and reduced power consumption.The working principle of A2G35S200-01SR3 is based on the basic principals of field effect transistors. A voltage is applied to the gate, which creates an electric field between the source and drain. This electric field modulates the amount of current allowed to flow through the device, thus controlling the working of the device. The higher the voltage applied to the gate, the more current that is allowed to flow, increasing the frequency of operation. The transistor works by allowing electrons to pass from the source to the drain, when the voltage applied to the gate is larger than the threshold voltage of the device.The main application of A2G35S200-01SR3 transistors is in the field of radio frequency communications. The low power consumption and the high frequency operation makes it ideal for use in mobile phones, portable radios, and other RF applications. The transistor can also be used in the design of amplifiers, power dividers and other RF circuitry.In summary, A2G35S200-01SR3 is a field effect transistor that is suitable for use in radio frequency applications, due to its low power consumption and high frequency operation. The working principle of the device is based on the same principles as other FETs, with the gate controlling the current flow through the device. The device is commonly used in mobile phones, portable radios and other RF applications, as well as in amplifier design.

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