A2V07H400-04NR3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A2V07H400-04NR3 Application Field and Working Principle

A2V07H400-04NR3 is a model number for a MOSFET (metal-oxide-semiconductor field-effect transistor) manufactured by Advanced Semiconductor Technology Co., LTD. This type of transistor is widely used in the electronics industry in a variety of applications, including radio frequency (RF) switching and amplifying. A2V07H400-04NR3 has the most common configuration among RF MOSFETs with high input impedance, high frequency operation, and low on-state resistance. This makes it an ideal choice for most high-frequency applications.

A MOSFET is composed of a gate, drain, and source. The gate is the control terminal and is used to control the current that flows through the transistor. The drain and source are the output terminals and are responsible for carrying the current when the MOSFET is turned on. The operation of a MOSFET is based on the principle of capacitive coupling. When an electric field is applied to the gate, it creates an electrical charge that is stored in the channel region of the MOSFET. This charge creates a capacitive effect between the gate and the channel that controls the current flow from the source to the drain.

A2V07H400-04NR3 is specifically designed for RF applications. It has a very low on resistance that makes it ideal for switching at high frequencies. In addition, it has a high input impedance, so it can amplify the signal without distorting the output. Its high frequency operation allows it to operate at frequencies up to 1 GHz. It is also capable of handling input power levels up to 50 W.

The A2V07H400-04NR3 is a commonly used RF transistor in many electronic circuits and systems. It can be used to switch or amplify signals in a variety of applications, including receivers, transmitters, amplifiers, and modulators. It is especially advantageous for high-frequency applications where low on-state resistance and high input impedance are required. In addition, its high frequency operation makes it suitable for use in a variety of RF applications.

In conclusion, the A2V07H400-04NR3 is a high-performance RF MOSFET that is widely used in electronics for switching and amplifying signals. It has a low on-state resistance, high input impedance, and high frequency operation up to 1 GHz. This makes it ideal for high frequency applications where a low on-state resistance and high input impedance is required. The A2V07H400-04NR3 is a popular choice for many different types of RF applications.

The specific data is subject to PDF, and the above content is for reference