A3T18H360W23SR6 Allicdata Electronics
Allicdata Part #:

A3T18H360W23SR6-ND

Manufacturer Part#:

A3T18H360W23SR6

Price: $ 65.77
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: 1.8GHZ 360W ACP1230S-4L2
More Detail: RF Mosfet LDMOS 28V 700mA 1.8GHz ~ 1.88GHz 16.6dB ...
DataSheet: A3T18H360W23SR6 datasheetA3T18H360W23SR6 Datasheet/PDF
Quantity: 1000
150 +: $ 59.78960
Stock 1000Can Ship Immediately
$ 65.77
Specifications
Series: --
Part Status: Active
Transistor Type: LDMOS
Frequency: 1.8GHz ~ 1.88GHz
Gain: 16.6dB
Voltage - Test: 28V
Current Rating: 10µA
Noise Figure: --
Current - Test: 700mA
Power - Output: 63W
Voltage - Rated: 65V
Package / Case: ACP-1230S-4L2S
Supplier Device Package: ACP-1230S-4L2S
Description

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A3T18H360W23SR6 is a type of field effect transistor, more specifically a metal oxide semiconductor field effect transistor (MOSFET). When it comes to radio frequency (RF) applications, this particular transistor is considered to be quite reliable and efficient. This article will discuss the general application field and working principle of the A3T18H360W23SR6, as well as its advantages and disadvantages.

MOSFET transistors are used in many different types of circuits and applications. They are commonly used in digital electronics, power management circuits, and amplifier and oscillator circuits. They are also suitable for high-speed switching and communication applications such as those found in Wi-Fi and Bluetooth devices. More specifically, the A3T18H360W23SR6 MOSFET is suitable for use in RF applications. It is particularly well-suited for use in digital-to-analog and analog-to-digital converters.

The A3T18H360W23SR6 has several important characteristics that make it suitable for RF applications. It has a relatively low on-resistance, making it particularly effective in power management circuits. It also has a relatively low drain-source capacitance and gate-source capacitance, making it suitable for high-speed switching operations. Finally, the A3T18H360W23SR6 is quite reliable, with an operating temperature range of –55°C to 150°C.

The A3T18H360W23SR6 transistor works in a similar way to other transistors. It works using a control gate, which acts as an input terminal. When the gate is left open, no current can pass through the transistor. However, when a voltage is applied to the gate, a current will flow between the source and the drain of the transistor. The current that passes through the A3T18H360W23SR6 will vary depending on the voltage applied to the gate.

The A3T18H360W23SR6 offers several advantages over other RF transistors. For instance, it has a low gate-source capacitance, making it suitable for high-speed switching operations. It also has a low drain-source capacitance, which reduces power consumption and helps to make the device more efficient. Finally, it is quite reliable, with its operating temperature range from –55°C to 150°C.

However, there are also some drawbacks of using the A3T18H360W23SR6. For example, it has a relatively low on-resistance rating, meaning it may not be suitable for use in high-power applications. Additionally, it has a relatively high power dissipation rating, making it inefficient in high-power applications. Finally, its cost can be relatively high.

In conclusion, the A3T18H360W23SR6 is a reliable and efficient MOSFET transistor that is suitable for use in RF applications. It works by using a control gate to allow a current to pass between the source and the drain of the transistor when a voltage is applied to the gate. Its advantages include a low gate-source capacitance, low drain-source capacitance, and a wide operating temperature range. However, its relatively low on-resistance and high power dissipation levels make it less suitable for high-power applications. Nevertheless, the A3T18H360W23SR6 is still an effective and reliable option for those looking for a transistor to use in radio frequency applications.

The specific data is subject to PDF, and the above content is for reference

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