AFG24S100HR5

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The AFG24S100HR5 is a double-common source N-channel type metal-oxide-semiconductor field effect transistor (MOSFET) with a peak drain-source current (I_ds) rating of 24 A. It is designed for applications in microwave circuits, high frequency communications and low noise acquisition apparatus.

The AFG24S100HR5 is a high voltage, low-noise, rugged device with a breakdown voltage of 100 V. It also has a very high DC gain, making it well suited for use in high-frequency applications. Additionally, the AFG24S100HR5 has a low gate capacitance and low gate-source capacitance, which enables high switching speeds and low-frequency operation.

The AFG24S100HR5 works in two primary ways. First, the field-effect transistor operates using a gate-source voltage, V_GS. This voltage controls the conductivity of the drain-source channel. Generally, the higher the gate-source voltage, the more current that can flow through the drain-source channel.

The second main way the AFG24S100HR5 works is through the application of source-drain drain current, I_sd, when a voltage is applied across the drain-source terminal. Once the voltage is applied, current can flow through the transistor, which then amplifies the current flowing through the drain-source channel.

The AFG24S100HR5 is an ideal choice for use in high-frequency communications and low noise acquisition devices, as it offers a combination of high voltages, low-noise output and a high DC gain. Additionally, its low gate capacitance and gate-source capacitance allow for high switching speeds and low-frequency operation. Finally, its 24 A peak drain-source current rating ensures it is suitable for use in both microwave circuits and high-frequency communications.

The specific data is subject to PDF, and the above content is for reference