AFIC10275GNR1 Allicdata Electronics
Allicdata Part #:

AFIC10275GNR1-ND

Manufacturer Part#:

AFIC10275GNR1

Price: $ 170.39
Product Category:

RF/IF and RFID

Manufacturer: NXP USA Inc
Short Description: IC RF LDMOS AMP
More Detail: RF Amplifier IC 978MHz ~ 1.09GHz TO-270 WB-14 GUL...
DataSheet: AFIC10275GNR1 datasheetAFIC10275GNR1 Datasheet/PDF
Quantity: 1000
500 +: $ 154.89500
Stock 1000Can Ship Immediately
$ 170.39
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Frequency: 978MHz ~ 1.09GHz
P1dB: --
Gain: 32.6dB
Noise Figure: --
RF Type: --
Voltage - Supply: 50V
Current - Supply: --
Test Frequency: --
Package / Case: TO-270-14 Variant, Gull Wing
Supplier Device Package: TO-270 WB-14 GULL
Description

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AFIC10275GNR1 is an RF amplifier developed by Skyworks Solutions. This amplifier, which is designed to operate from a single +2.7 V power supply, is capable of amplifying RF signals in the 0.05–6 GHz frequency range. AFIC10275GNR1 has a small size, and is mainly used in space-constrained applications such as mobile devices and wearables. It is one of the smallest RF amplifiers available on the market.

The AFIC10275GNR1 features a high linear output power of 28 dBm at a gain of 24.5 dB, a noise figure of 0.9 dB, and supports frequency hopping compared to other RF amplifiers. In the amplifier’s main application field, it can be used to provide increased wireless data throughput, reduce power consumption, increase sensitivity, and extend battery life.

The AFIC10275GNR1’s working principle is based on the positive feedback amplifier topology. This type of amplifier topology utilizes the positive feedback effect, where a portion of the output signal is used to amplify the input signal. As such, the amplifier has the ability to amplify an input signal to a much larger output signal than would be possible with other types of amplifiers. In addition, this topology has the advantage of being able to work with high input and output power levels.

The AFIC10275GNR1 utilizes a GaAs (Galium Arsenide), HEMT (High Electron Mobility Transistor) process for its amplifier circuits. This type of process is designed to provide gain and efficiency at high frequencies and is well suited for RF amplifier applications. The circuit also features an integrated predistortion linearization to improve linearity. This ensures that the amplifier can provide reliable performance and distortion-free linear output power over a wide range of input signals.

The AFIC10275GNR1 also features integrated biasing circuitry which enables the amplifier to accurately control its bias point. This ensures that the amplifier can be operated at the optimal bias point and provide maximum efficiency. In addition, the bias circuitry also allows the amplifier to maintain a stable, low-noise operating condition even at varying power levels and frequencies.

Overall, the AFIC10275GNR1 is an RF amplifier designed for space-constrained applications. The amplifier features a high gain, low noise figure, excellent linearity, and supports frequency hopping. The AFIC10275GNR1 also features integrated biasing and predistortion linearization circuits to ensure reliable performance and an optimal operation. The amplifier is well suited for mobile device and wearables applications requiring a high performance, low-power RF amplifier.

The specific data is subject to PDF, and the above content is for reference

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