AFIC10275NR5 Allicdata Electronics
Allicdata Part #:

AFIC10275NR5-ND

Manufacturer Part#:

AFIC10275NR5

Price: $ 190.43
Product Category:

RF/IF and RFID

Manufacturer: NXP USA Inc
Short Description: AIRFAST RF LDMOS WIDEBAND INTEGR
More Detail: RF Amplifier IC 978MHz ~ 1.09GHz
DataSheet: AFIC10275NR5 datasheetAFIC10275NR5 Datasheet/PDF
Quantity: 1000
50 +: $ 173.11900
Stock 1000Can Ship Immediately
$ 190.43
Specifications
Series: --
Part Status: Active
Frequency: 978MHz ~ 1.09GHz
P1dB: --
Gain: 32dB
Noise Figure: --
RF Type: --
Voltage - Supply: 50V
Current - Supply: --
Test Frequency: --
Description

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RF Amplifiers

The AFIC10275NR5 RF Amplifier is a highly efficient GaN on Silicon Carbide (SiC) power amplifier that provides up to 275 watts of small-signal gain. Developed as an alternative to high peak power Class AB amplifiers, it provides unrivaled linearity and output power with minimal power consumption. This makes the AFIC10275NR5 suitable for many applications, including high-power, linearized RF precision platforms.

Application Field

The AFIC10275NR5\'s high efficiency, low distortion performance, and high gain make it suitable for applications requiring high linearity and low noise performance. Its wideband characteristics offer superior performance in mobile, broadcast, and defense applications, including Wireless Infrastructure, Military/Aerospace, and Industrial/Commercial applications. It is also compatible with industry-standard broadband amplifier designs, making it an ideal choice for high-power, high-linearity RF applications. In addition, its high-frequency bandwidth capability makes it an excellent choice for high-precision digital communications, including Wi-Fi, WiFi-id, Bluetooth, and GPS applications.

Working Principle

The AFIC10275NR5 RF Amplifier is a GaN on SiC power amplifier with a cascode architecture. It features two stages of amplification, each of which utilizes Gallium Nitride transistors to provide high linearity, high efficiency, and high gain. The first stage of amplification utilizes a single stage cascode amplifier, while the second stage utilizes an additional cascode amplifier and a dual-ballast resistor. This design enables the amplifier to achieve exceptionally high linearity and power output with minimal power consumption. The output section of the amplifier includes a wideband RF transformer and a low-noise bias-regulated source follower.

The combination of these two features results in a high-efficiency, high linearity, wide-bandwidth RF amplifier with a low noise figure and high gain. The amplifier\'s performance is further enhanced by its low-distortion, wide-bandwidth output section. This makes the amplifier well-suited for high-power, high-linearity applications. Moreover, its high-frequency bandwidth capability makes it an excellent choice for high-precision digital communications.

Conclusion

In conclusion, the AFIC10275NR5 is an ideal choice for applications requiring high linearity and low noise performance. Its wideband characteristics offer superior performance in mobile, broadcast, and defense applications, while its low-distortion, wide-bandwidth output section makes it well-suited for high-power, high-linearity applications. Its high-frequency bandwidth capability makes it an excellent choice for high-precision digital communications, including Wi-Fi, WiFi-id, Bluetooth, and GPS applications. All these characteristics make the AFIC10275NR5 an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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