AFIC31025NR1

Series:	--
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	2.7GHz ~ 3.1GHz
Gain:	30dB
Current Rating:	--
Noise Figure:	--
Power - Output:	25W
Voltage - Rated:	32V
Package / Case:	TO-270-17 Variant, Flat Leads
Supplier Device Package:	TO-270WB-17

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AFIC31025NR1 is an RF MOSFET (Radio Frequency Metal Oxide Semiconductor Field-Effect Transistor) designed for use in high-frequency RF applications such as in radio transmitters, receivers, amplifiers and switching applications. This type of field-effect transistor is especially well suited for use in microwave circuits operating around 1 GHz and beyond, as it is able to handle much higher frequencies than other types of transistors. The AFIC31025NR1 switch is a N-channel enhancement-mode device and is constructed using the semiconductor device fabrication process known as FRAM (Field-effect Avalanche and Metalized-storage). This process allows for very low power consumption and is ideally suited for use in applications requiring efficient, low-power switching. The operation of an N-channel enhancement-mode MOSFET switch is based upon the energy band diagram which indicates how the energy levels of electrons and holes can affect the flow of charge between two points in a semiconductor material. The diagram is based on the principle that when a voltage is applied to the metal gate region of the switch, a depletion region (sometimes referred to as a 2-D barrier) is created which prevents the flow of electrons and holes within the channel region of the device. By controlling the flow of charge through the channel region of the switch, the RF signal is able to pass through the device, resulting in an amplified signal. As the name implies, an RF MOSFET switch operates with very high frequency (microwave) signals, and can handle any frequency within the specified range. The AFIC31025NR1 switch can handle frequencies ranging from 0.1GHz to 1GHz, due to its high breakdown voltage and strong gate oxide oxide insulator layer. In conclusion, the AFIC31025NR1 is a very useful device for applications requiring high frequency switching and which require low power consumption. It is constructed using the FRAM process and is capable of switching frequencies up to 1GHz, making it an ideal choice for radio transmitters, receivers, amplifiers and switching applications. Additionally, its strong breakdown voltage and strong gate oxide oxide insulator layer make it a reliable choice for high frequency applications.

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