
AFM907NT1 Discrete Semiconductor Products |
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Allicdata Part #: | 568-13545-2-ND |
Manufacturer Part#: |
AFM907NT1 |
Price: | $ 1.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | RF MOSFET LDMOS 7.5V 10-DFN |
More Detail: | RF Mosfet LDMOS 10.8V 100mA 136MHz ~ 941MHz 8.4W ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1000 +: | $ 0.94427 |
2000 +: | $ 0.89706 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 136MHz ~ 941MHz |
Gain: | -- |
Voltage - Test: | 10.8V |
Current Rating: | 10µA |
Noise Figure: | -- |
Current - Test: | 100mA |
Power - Output: | 8.4W |
Voltage - Rated: | 30V |
Package / Case: | 16-VDFN Exposed Pad |
Supplier Device Package: | 16-DFN (6x4) |
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AFM907NT1 Application Field and Working Principle
The AFM907NT1 is a monolithic RF power HEMT transistor manufactured by NXP Semiconductor. It is made for high efficiency and linearity in the frequency range of 1.5-2.7 GHz. The device is designed for circuits which require high efficiency, linearity, low distortion, and low current consumption, such as Power Amplifiers (PAs) for applications including remote radio control systems, Global Positioning System (GPS), and 802.11a/b/g/n WLANs.
The AFM907NT1 transistor is a high electron mobility transistor (HEMT) which is based on the principle of the field effect transistor (FET). This type of transistor is capable of handling very high input and output voltages while consuming very small amounts of current, making them highly suitable for use in radio frequency (RF) applications. As a result, FETs are commonly used in radio and microwave circuitry as amplifiers, oscillators, switches, and in power conversion circuits.
The basic principle of FET operation is based on the application of an electric field to the gate region. This electric field creates an inversion layer of electrons at the oxide-silicon interface. These electrons then form a channel between the source and drain terminals, allowing the drain current to flow. As the input voltage (Vgs) is increased, the electron concentration in the channel increases and the drain current (Id) also increases. This allows amplification of the input signal in the form of an amplified output current.
The AFM907NT1 transistor is a GaN HEMT device with an integrated high-power amplifier with a maximum drain efficiency up to 50%. The device features a 48 dB power gain along with a very high linearity performance over a range of frequencies. Furthermore, the device has a low power consumption of over 90% at 1.5-2.7 GHz, making it highly-suitable for a wide range of applications.
The AFM907NT1 is a highly effective transistor for use in a variety of RF applications, such as remote radio control systems, Global Positioning System (GPS), and 802.11a/b/g/n WLANs. With its high gain, efficiency, and linearity, the device provides excellent performance in these types of applications. The NXP Semiconductor AFM907NT1 provides a highly effective solution for a wide range of RF applications.
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