AFT31150NR5 Discrete Semiconductor Products

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The AFT31150NR5 is a high performance RF Power MOSFET from America developed by Alpha & Omega Semiconductor Inc. Designed for a wide range of power amplifier applications from low-band communications to high-band applications, the AFT31150NR5 offers high efficiency, high output power, low readjustment power and low thermal resistance.

This device is an important member of the Alpha & Omega Semiconductor Inc. family of products and is built to meet the most stringent requirements of mobile and base station requirements. Generally, AFT31150NR5 can be used in mobile phones, communication systems, satellite communications, broadband communications and other RF devices.

The AFT31150NR5 is a single N-channel enhancement mode MOSFET with Junction-gate Output Characteristic which employs a junction-gate-source (JGS) structure. This device uses a unique monolithically integrated high voltage Insulated Gate Bipolar Transistor (IGBT) and 12V logic level MOSFET structure. It offers high on resistance, low gate charge and easy gate drive functionality. Additionally, it is capable of operation over a wide range of temperatures with high efficiency and fast switching speed.

The AFT31150NR5 operates from 4.5 to 12 volts control voltage and has a maximum supply voltage of 400 volts. The device is designed to operate in the temperature range from -40 to +125 degrees Celsius. Additionally, the AFT31150NR5 features a very small package which makes it well suited for applications with limited space availability. It also offers very low output capacitance which is essential for high frequency applications.

In order to maximize the efficiency for different applications and reduce distortion, the AFT31150NR5 features a Source-DrainSaver and a Constant-Gate-Voltage-Regulating circuit which further reduce the switching loss, readjustment power, and gate charge. Furthermore, the AFT31150NR5 can be integrated into an RF power amplifier system to increase its output power, efficiency and reduce distortion. The device also offers high gain, low bias and low signal distortion which make it ideal for mobile and base station applications.

In summary, the AFT31150NR5 is a high performance RF Power MOSFET which offers high efficiency, high output power and low readjustment power. It is an ideal device for a wide range of RF applications from low-band communications to high-band applications due to its features such as low output capacitance, low gate charge, wide operating temperature range and high gain, low bias and low signal distortion. Furthermore, it also offers integration of Source-DrainSaver and a Constant-Gate-Voltage-Regulating which further reduce switching loss, readjustment power and gate charge.

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