AIHD04N60RATMA1

Power - Max:	75W
Supplier Device Package:	PG-TO252-3
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 175°C (TJ)
Test Condition:	400V, 4A, 43 Ohm, 15V
Td (on/off) @ 25°C:	14ns/146ns
Gate Charge:	27nC
Input Type:	Standard
Switching Energy:	90µJ (on), 150µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 4A
Current - Collector Pulsed (Icm):	12A
Current - Collector (Ic) (Max):	8A
Voltage - Collector Emitter Breakdown (Max):	600V
Moisture Sensitivity Level (MSL):	--
IGBT Type:	Trench Field Stop
Lead Free Status / RoHS Status:	--
Part Status:	Active

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Introduction

The AIHD04N60RATMA1 is a IGBT(Insulated Gate Bipolar Transistor) developed by ROHM. This device is a N-channel type and can achieve high breakdown voltage and low saturation voltage under low gate voltage drive. It is suitable for use in all kinds of switching applications that require high speed operation. This device is available in TO-263 package and can be used in variety of equipment, including lighting and UPS(Uninterruptible Power Supply).

Application fields

AIHD04N60RATMA1 can be found in in various applications, such as lighting and UPS. It can be used as a switch in High Voltage Switching (HVS) applications and small air conditioning systems. It is usually used to control the voltage of the load by switching the current to the load on and off. It can also be used in power amplifier circuits and other high voltage applications to amplify the voltage. Its high switching speed and drive current make it suitable for fast switching applications.

Working Principle

The AIHD04N60RATMA1 works by allowing current to flow from the collector to the emitter when the gate voltage is applied. When the gate voltage is low, the current flow is inhibited and the transistor is off. When a positive voltage is applied to the gate, it forms a conducting channel between the collector and the emitter, allowing current to flow through. This method of current regulation is called switching and is the source of the transistor\'s power. In order to turn the transistor off, a negative voltage is applied to the gate. This creates a reverse bias across the junction, preventing current from flowing through the channel and turning the transistor off. This process is called saturation.The AIHD04N60RATMA1 has a breakdown voltage of 600V, which means it can withstand higher voltages without being damaged. It also has a low saturation voltage, which means it can turn off faster and provide more efficient switching times. The AIHD04N60RATMA1 can also be used as an ON/OFF switch for AC applications as well as for DC applications. The gate voltage can be adjusted to control the frequency of the current. This can be used to control the speed of motor or fans, and to regulate the power delivery to the lights and other electronic components.

Conclusion

AIHD04N60RATMA1 is a IGBT device that can be used in a variety of applications. It is capable of providing high breakdown voltages and low saturation voltage. Its high switching speed and drive current make it suitable for switching applications. The device can be used to control the voltage and current of the load, and can be used as a switch for both AC and DC applications.

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