
Allicdata Part #: | AIHD10N60RATMA1-ND |
Manufacturer Part#: |
AIHD10N60RATMA1 |
Price: | $ 0.60 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IC DISCRETE 600V TO252-3 |
More Detail: | IGBT Trench Field Stop 600V 20A 150W Surface Mount... |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
2500 +: | $ 0.54153 |
Power - Max: | 150W |
Supplier Device Package: | PG-TO252-3 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Test Condition: | 400V, 10A, 23 Ohm, 15V |
Td (on/off) @ 25°C: | 14ns/192ns |
Gate Charge: | 64nC |
Input Type: | Standard |
Switching Energy: | 210µJ (on), 380µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 10A |
Current - Collector Pulsed (Icm): | 30A |
Current - Collector (Ic) (Max): | 20A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench Field Stop |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
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AIHD10N60RATMA1 is a type of Insulated Gate Bipolar Transistor (IGBT), which belong to a specific class of transistors called ‘Single’. This transistor can be used in many application fields, such as power electronics, automotive and telecommunications. In this article, we will discuss the application field and working principle of AIHD10N60RATMA1.
IGBTs are mainly used in applications that require high speed power control and high power efficiency. AIHD10N60RATMA1 is a type of IGBT which is particularly suitable for high efficiency power control purposes. This IGBT has a high collector-emitter breakdown voltage (VCES) of 600V and a high collector current of 10A. It has a very low power dissipation, making it ideal for use in power electronic applications.
AIHD10N60RATMA1 can be used in a variety of power electronic applications, including motor control, solar photovoltaic inverters, uninterruptible power supply (UPS) systems, switched-mode power supplies (SMPS) and dimmers. This IGBT is also suitable for use in applications where higher speed switching is required, such as motors, induction heaters and solenoids. In addition, it can be used in high frequency applications such as radio frequency (RF) amplifiers and power oscillators.
The working principle of AIHD10N60RATMA1 is based on the principle of a thyristor. It contains an insulated gate and a pair of bipolar junction transistors (BJTs). When the gate is triggered by an electrical signal, the two BJTs become connected and allow current to flow between the emitter and collector. The current is then amplified by the BJTs and the voltage across the collector-emitter terminals is increased. As a result, the transistor is able to switch on and off quickly and can be used for high speed power control.
In conclusion, AIHD10N60RATMA1 is a type of IGBT which is suitable for use in a variety of power electronic applications. It operates on the principle of a thyristor and can switch on and off very quickly. This makes it ideal for use in applications where higher speed switching is required, such as motors, induction heaters and dimmers. AIHD10N60RATMA1 is also suitable for use in high frequency applications such as RF amplifiers and power oscillators.
The specific data is subject to PDF, and the above content is for reference
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