
Allicdata Part #: | AIHD04N60RFATMA1-ND |
Manufacturer Part#: |
AIHD04N60RFATMA1 |
Price: | $ 0.43 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IC DISCRETE 600V TO252-3 |
More Detail: | IGBT Trench Field Stop 600V 8A 75W Surface Mount P... |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
2500 +: | $ 0.38785 |
Power - Max: | 75W |
Supplier Device Package: | PG-TO252-3 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Test Condition: | 400V, 4A, 43 Ohm, 15V |
Td (on/off) @ 25°C: | 12ns/116ns |
Gate Charge: | 27nC |
Input Type: | Standard |
Switching Energy: | 60µJ (on), 50µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 4A |
Current - Collector Pulsed (Icm): | 12A |
Current - Collector (Ic) (Max): | 8A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench Field Stop |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
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AIHD04N60RFATMA1 application field and working principle
The AIHD04N60RFATMA1 is a robust, single-chip IGBT that has been designed to perform well in a variety of applications. These include: industrial drive systems, motor drives, renewable energy systems, induction heating, welding, lifting, and AC motor speed control.
The AIHD04N60RFATMA1 employs a horizontal trench architecture, which reduces the on-state losses and switching frequency. This single-chip IGBT has an optimized gate charge and provides low conduction and switching losses. The device also features high immunity to dv/dt noise, short circuit capacity, and low IGBT turn-off energy. Additionally, the AIHD04N60RFATMA1 is rated for current ratings up to 40 A and blocking voltages up to 600 V.
The AIHD04N60RFATMA1 is a three-terminal semiconductor device which can act as an electrothermal switch for the control of higher power switching applications. The device itself consists of three components: an N-channel MOSFET, a PN-diode, and a problem area. The gate of the MOSFET is connected to the terminal of the IGBT, and the source and ground is connected directly to the two gate terminals of the IGBT. The problem zone creates a better thermal management and increased immunity to the frequency stresses.
The basic process of operation for an IGBT is similar to that of a MOSFET; however, an IGBT includes an additional layer of protection which helps to improve the dv/dt noise immunity and short-circuit capability of the device. When a voltage is applied to the gate terminal of the IGBT, a channel is created between the source and the drain, which allows current to flow through the device. This actives the IGBT and allows current to flow between the drain and the source.
When no voltage is present at the gate terminal, the channel between the drain and the source is turned off, thus preventing the flow of current. This feature of the IGBT makes it an ideal choice for applications where the current must be turned off in a very short amount of time.
The AIHD04N60RFATMA1 IGBT is designed to provide increased protection for demanding switching applications. Its optimized gate charge, low on-state losses, and high immunity to dv/dt noise make it a perfect choice for applications where power switching needs to be done quickly and efficiently. The AIHD04N60RFATMA1 is ideal for applications such as industrial drive systems, motor drives, renewable energy systems, induction heating, AC motor speed control, lifting, and welding.
The specific data is subject to PDF, and the above content is for reference
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