AIHD06N60RFATMA1

Power - Max:	100W
Supplier Device Package:	PG-TO252-3
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 175°C (TJ)
Test Condition:	400V, 6A, 23 Ohm, 15V
Td (on/off) @ 25°C:	8ns/105ns
Gate Charge:	48nC
Input Type:	Standard
Switching Energy:	90µJ (on), 90µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.5V @ 15V, 6A
Current - Collector Pulsed (Icm):	18A
Current - Collector (Ic) (Max):	12A
Voltage - Collector Emitter Breakdown (Max):	600V
Moisture Sensitivity Level (MSL):	--
IGBT Type:	Trench Field Stop
Lead Free Status / RoHS Status:	--
Part Status:	Active

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AIHD06N60RFATMA1 is an IGBT transistor designed for high performance power application. This device is based on the new generation high voltage DMOS technology which ensures highest efficiencies and reliability. IGBTs are power switching devices used for power conversion and handling applications. This device is used for a variety of low voltage and voltage applications, ranging from small consumer electronics to industrial DC motor control. The device can also be used in industrial applications such as HVAC, UPS, UPS Auto-start, and EV/HEV power systems.

Application Field

AIHD06N60RFATMA1 is very suitable for various switch mode power supply applications such as On-Line and Off-Line SMPS. Also, it is used in high voltage and frequency drive applications. Its fast commutation properties also make it suitable for high current pulse applications like welding or pulse motors. Furthermore, the device is used in soft switching applications such as motor soft switching and braking, solar inverters, power factor correction (PFC).

Working Principle

AIHD06N60RFATMA1 works on the principle of an insulated gate bipolar transistor (IGBT). An IGBT consists of a PN junction and an insulated gate that can be separately operated. Thus, it has a combination of the properties of MOSFETs and bipolar transistors, it has the fast switching speeds of MOSFETs and the low saturation voltage of bipolar transistors. At the same time, it has higher current capability and much lower switching losses compared to MOSFETs.When an IGBT is switched on, electric current flows from the collector to the emitter, switching the load with a high current. The current carrying capacity of the AIHD06N60RFATMA1 is significantly higher than other IGBTs with the same chip size. As a result, it can handle higher power with fewer IGBTs, which reduces the cost and power dissipation of the circuit. Moreover, the device features an improved current sharing, which enables higher current output with fewer IGBTs.AIHD06N60RFATMA1 also has a very low switching resistance and capacitance which reduces switching loss and helps reduce noise. The device also has a very low gate charge which helps reduce gate-drive power requirements. As such, this device offers the best performance for applications requiring high current and power.In addition, AIHD06N60RFATMA1 has over-temperature and short circuit protection features that protect the device in case of fault. This helps ensure the device operates at pre-determined temperature, reducing power dissipation and inrush current.In conclusion, AIHD06N60RFATMA1 is a robust IGBT device designed for high power and performance applications, offering excellent performance with very low switching losses and improved current sharing, making it ideal for applications in motor control and power conversion.

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