AIHD15N60RFATMA1

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The AIHD15N60RFATMA1 is a commonly-used IGBT, or insulated gate bipolar transistors. This type of transistor is known for its efficiency in conducting and switching current, as well as its high power density compared to other transistors. It is well-suited for a wide range of applications, such as motor control, UPS, renewable power generation, and inverter appliance applications.

The AIHD15N60RFATMA1 is a single device, meaning it contains single IGBT core and one accompanying diode in thesame packgage. This offers enhanced space savings if compared to similar parts. It is rated at 950 volts, 5.6 amperes and a total power dissipation of 152 Watts. Additionally, it can be operated at temperatures up to 150°C ambient.

The AIHD15N60RFATMA1’s application field includes appliance inverters, UPS, electric power converters, and traction systems. Its typical applications include motor control and drives, welding, aerospace and defense, renewable energy, and more. This device is known for its fast switching speeds, control precision, high-temperature performance, and compatibility with high-frequency switching.

The design and implementation of the AIHD15N60RFATMA1 is straightforward. Its IGBTs use optimized process and passivation technology to achieving a high MOS/BJT ratio. This allows the transistor to efficiently convert electric power between DC input and pulsed AC output. Its inner core is composed of four transistors and eight resistors, while the active element is an N-channel insulated gate field effect transistor. The package is constructed with small surface mountable pins for a highly adaptable and space-saving design.

The AIHD15N60RFATMA1 also includes various safety functions, such as over-current protection, short-circuit protection, overvoltage protection, and over-temperature protection. All of this combines to make the AIHD15N60RFATMA1 an efficient, flexible, and reliable transistor for a variety of application needs.

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