AO4914_101 Allicdata Electronics
Allicdata Part #:

AO4914_101-ND

Manufacturer Part#:

AO4914_101

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET 2N-CH 30V 8A
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 8A 2W Surface ...
DataSheet: AO4914_101 datasheetAO4914_101 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 20.5 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AO4914_101 is part of AO series power array and the AO series of power DC-DC arrays are Nchannel power array products based on the Trench MOSFET technology. It consists of 8 transistors and diodes wrapped in a single package to provide an integrated solution for power system design.

AO4914_101 application field includes high-current, high voltage, low-power control applications as high as 60V and can be used to provide a variety of solutions, such as DC-DC power supply, switching power supply, consumer products such as laptops, game consoles and other portable products, computer servers and power switches for consumer and industrial applications.

AO4914_101 working principle highlights the Trench MOSFET power transistor design. It has a very low RDS(on) resistance of only 0.55Ω @12V, but still can provide high power conversion efficiency and high reliability performance. The low on resistance can reduce the input and output voltage deviation, thus providing a large improvement in the power conversion efficiency. Additionally, the Metal Oxide Semiconductor Field Effect Transistor features a high breakdown voltage, which is up to 85V. This can effectively protect the circuit, as well as provide high power output performance.

The package of AO4914_101 also has special characteristics. It is manufactured in the Small Outline Integrated Circuit (SOIC) package. This provides a much smaller footprint and easier integration into any device. In addition, it also helps to reduce power loss and reduce susceptibility to noise.

Furthermore, the AO4914_101 can provide users with a variety of settings, including regulating the output current, setting protection, and controlling the voltage and current of the staircase; it also can provide the sequence control and current sensing to accurately measure power and current status. The tolerance of AO4914_101 is ±2.5% and its temperature coefficient is ±2 mV/ºC, which give the product good accuracy and stability.

In conclusion, AO4914_101 is not just an ordinary power array, it is a product with the Trench MOSFET power transistor design with high efficiency, low power loss, and tight tolerance accuracy. Its small footprint and excellent protection give it more flexibility for power system designs. It is suitable for a wide range of uses and provides various settings that are suited to different applications.

The specific data is subject to PDF, and the above content is for reference

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