Allicdata Part #: | 785-1561-2-ND |
Manufacturer Part#: |
AO5803E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET 2P-CH 20V 0.6A SC89-6L |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 400mW Surface... |
DataSheet: | AO5803E Datasheet/PDF |
Quantity: | 1000 |
Supplier Device Package: | SC-89-6 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | 800 mOhm @ 600mA, 4.5V |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 100pF @ 10V |
Power - Max: | 400mW |
Operating Temperature: | -50°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
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AO5803E is a semiconductor component widely used for power management duties in a wide range of applications. This field-effect transistor (FET) array is manufactured by Alpha and Omega Semiconductors, Inc. (AOS).
AO5803E is part of the Alpha & Omega\'s Advanced Power MOSFET (APM) product family and is available in an 8-pin IC package. It is a low-voltage, single-phase N-channel complementary metal-oxide-semiconductor (CMOS) FET array, with specific power semiconductor device capabilities and features including high-level PWM functions, load switching, current sensing, over-current protection, and thermal sensing. AO5803E also has built-in logic clamping diodes, which protect the circuit when switching is taking place.
The AO5803E provides superior energy efficiency and thermal performance. Its high-frequency switching capability reduces power dissipation and EMI generation, while its low “on” and “off-state resistance” allows for higher current levels. Furthermore, the device is designed to provide faster on/off transitions and improved power performance.
AO5803E works by converting small input signals into higher power capability. The device incorporates eight voltage-controlled N-channel MOSFETs (VNMOFS), which act as a switch. When the gate voltage is below a certain threshold, the switch is turned off and the load, such as a motor or light, is disconnected. When the gate voltage is above that threshold, the switch is turned on and the load is connected.
Moreover, the AO5803E\'s built-in logic clamping diodes allow it to act as an over-current protection device. These diodes sense the current passing through the load and limit the current to safe levels, thereby protecting the device from over-current or thermal failure.
The AO5803E can be employed in a wide range of applications including motor speed control and start-up, LED driver solutions, DC-DC converters, server-power supplies, and automotive systems.
In conclusion, AO5803E is a high-performance, single-phase FET array suitable for a diverse range of power management tasks. It offers superior energy efficiency, improved power performance, and built-in logic clamping diodes for better over-current protection. Thus, the AO5803E is an ideal solution for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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