AO5804EL

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The AO5804EL is a MOSFET array consisting of two N-channel Enhancement Mode MOSFETs. This device operates over a wide temperature range and is ideal for high power density applications. It is ideally suited for high current and low voltage applications, such as in switching supplies and module power applications. The AO5804EL features a common source output with inherent dV/dt immunity and fast switching speeds. This device is well-suited for use in synchronous rectification and as driver FETs in power amplifiers.

A MOSFET works using a potential difference or voltage across the gate and source terminals to control the current between the drain and source terminals. This is possible due to the electrical field effect, which is the ability of an electric field to alter the properties of semiconductors such as MOSFETs. This alteration in properties allows a MOSFET to act as a switch as current can flow through a MOSFET when the gate to source voltage is above a certain threshold. The AO5804EL makes use of this principle to act as a switch in power applications.

The AO5804EL is well-suited to applications such as switching noise sensitive analog, digital and RF signals. It features a low RDSON and low gate charge to ensure low power dissipation and reduced losses. It also features a wide VDD range and is capable of operating at higher junction temperatures. The device 2.5V maximum gate voltage allows for improved compatibility with low-voltage logic and DC-DC converters.

The AO5804EL’s wide VDD range, low RDSON, low gate charge and high dV/dt immunity make it well-suited for use in synchronous rectification and as driver FETs in power amplifiers. It is also well-suited for use in high power density applications, such as motor controllers, power supplies and motor drives. Furthermore, the device is well-suited for switching noise sensitive analog, digital and RF signals.

The AO5804EL is an ideal solution for high current and low voltage applications in high power density systems. It features a common source output with inherent dV/dt immunity and fast switching speeds. It is also capable of operating over a wide temperature range, making it well-suited for power modules, switching supplies and motor controllers. The device is ideally suited for use in synchronous rectification and as driver FETs in power amplifiers.

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