Allicdata Part #: | 785-1562-2-ND |
Manufacturer Part#: |
AO5804E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET 2N-CH 20V 0.5A SC89-6L |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 500mA 280mW Su... |
DataSheet: | AO5804E Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 500mA |
Rds On (Max) @ Id, Vgs: | 550 mOhm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 1nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 45pF @ 10V |
Power - Max: | 280mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SC-89-6 |
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.The AO5804E array is a high performance, low-on-resistance and low-power array, featuring two integrated N-channel MOSFETs and comprising a logic level gate drive. These N-channel MOSFETs consist of a high-voltage tub and a low-voltage drain region, connected in series. With such a design, the AO5804E array offers excellent linearity, no body diode conduction, high switching efficiency and low input capacitance, with minimal switching noise.
The array is ideal for use in a wide range of applications, from small low voltage, low current applications to high voltage and high current applications. The AO5804E array is suitable for many high switching frequency applications and is designed for high-temperature operation. It is also suitable for a wide range of power management applications, such as switching, power supply design and power management.
The AO5804E array features a high peak current rating of up to 1.75A and a low RDS(on)of 110mΩ. This low RDS(on)allows the array to be used in a wide range of power applications, including power supplies, motor control, audio and other power management applications. The AO5804E array also has a low gate threshold voltage of 1.3V, making it ideal for use in low voltage applications.
When applied with a voltage on the gate (VG), the AO5804E array responds to the voltage by increasing its application field, extending the current path between the drain and the source. This increases the drain current (ID) which causes a voltage drop that results in the MOSFETs being switched on. Furthermore, the AO5804E array has an integrated logic level gate drive, which allows the MOSFETs to be driven by a low voltage input signal, eliminating the need for an external driver.
The low gate threshold voltage of 1.3V and the low on-resistance of 110mΩ help to reduce power consumption and make the array more suitable for a wide range of power management applications. In addition, the array is also designed to prevent parallel conduction, preventing redundant power loss and further reducing power consumption.
Due to its low on-resistance and threshold voltage, the AO5804E array is well suited for a wide range of high frequency applications, including motor control and power monitoring. It is also suitable for applications such as audio power management and data communications.
In summary, the AO5804E array is a low power, high performance array with a high peak current rating and a low on-resistance. It is suitable for a wide range of power management applications, including power supplies, motor control, audio and other power management applications. It features a low gate threshold voltage, low input capacitance, high switching efficiency and low switching noise. The array is also designed to prevent parallel conduction, preventing redundant power loss and further reducing power consumption.
The specific data is subject to PDF, and the above content is for reference
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