Allicdata Part #: | AO6601L-ND |
Manufacturer Part#: |
AO6601L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET P-CH 30V 6TSOP |
More Detail: | Mosfet Array N and P-Channel 30V 3.4A (Ta), 2.3A (... |
DataSheet: | AO6601L Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Part Status: | Last Time Buy |
FET Type: | N and P-Channel |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 3.4A (Ta), 2.3A (Ta) |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 3A, 10V, 135 mOhm @ 2.3A, 10V |
Vgs(th) (Max) @ Id: | 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 4.34nC @ 4.5V, 4.8nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 390pF @ 15V, 409pF @ 15V |
Power - Max: | 1.15W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | 6-TSOP |
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AO6601L application field and working principle
AO6601L is a high voltage, low Rds(on), N-Channel Lateral MOSFET array that is comprised of three independent P-Channel and N-Channel MOSFETs, packaged in a single surface mount device. Due to their integration and the cost-benefit associated with their low Rds(on), the AO6601L is an excellent choice for a wide range of applications such as high voltage and cascode switch drivers, floating gate drive power supply, and power supply sequencing.
This device utilizes vertical P-Channel MOSFETs and three N-Channel MOSFETs. The operation input logic is compatible with TTL voltages and the output is controlled by the ON and OFF control logic. The ON/OFF control logic of this device can be used to allow high frequency switching and can also be used to achieve a low-power state.
The AO6601L uses independent N-Channel and P-Channel MOSFETs to handle the high voltage requirements of high power applications. In addition, these devices feature low on-resistance. This helps to minimize energy losses and improve the efficiency of the power delivery circuit. The on-resistance values vary with temperature and device size, but typically AO6601L devices have an Rds(on) of 0.06 ohms and an On-Resistance (Ron) at 25°C of 0.42 ohms.
The AO6601L features a standard VIN logic input which is used to control the output state of the device. These devices can turn on and off at either low-side or high-side which makes them suitable for applications requiring polarity control as well as mechanical switching.
The operation of the AO6601L is based on its patented trench gate process. This process allows the device to maintain high frequency switching with low loss and low on-resistance. AO6601L devices have been specifically designed to reduce power dissipation and improve circuit protection.
The AO6601L is an ideal choice for applications which require a low-power, high-frequency switching device. The on-resistance values of the device are low, allowing for more efficient use of the energy and better protection to the circuit. This device also provides polarity control, allowing for easier operation and improved control of the device.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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AO6601_001 | Alpha & ... | 0.0 $ | 1000 | MOSFET N/P-CH 30V 6-TSOPM... |
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