AO6602L Discrete Semiconductor Products

The AO6602L is a high voltage and high current power MOSFET array designed for automotive, industrial, and communications applications. This device integrates eight channels of independent 0.56A N-channel power MOSFETs into one package, designed to provide high performance with minimal size and cost. This product is an excellent choice for systems requiring high reliability, superior efficiency, and maximum flexibility.At the heart of the AO6602L is its unique architecture, which is based on a 3-terminal MOSFET array design. The three terminals of each device are the drain, gate, and source. By combining the gate and source together onto a single terminal, the AO6602L offers superior performance and reliability compared to similar devices based on two-terminal MOSFET arrays.The AO6602L is available in both low- and high-power versions. The low-power version can provide up to 0.1A of continuous current per channel, while the high-power version can provide up to 0.56A. Both versions feature an integrated thermal shutdown circuit which helps to protect the device in the event of an overcurrent condition.The AO6602L utilizes an advanced die-level architecture that is designed to ensure reliable operation in high-temperature operating conditions. This device features an integrated high-voltage Polysilicon depletion device that helps protect the device against potential substrate leakage. The device also features an integrated high voltage zener diode designed to protect against transient events such as electrostatic discharge.The AO6602L is available in a variety of packages to accommodate different system requirements. It is available in SMD packages such as BGA and QFP as well as through-hole packages such as DIP, TO-220, and TO-263. The SMD packages feature an easy to use pinout for simplified PCB design, while the through-hole packages provide enhanced mechanical robustness for through-hole mounting.In addition to its superior performance and reliability, the AO6602L provides maximum flexibility for the system designer. Its integrated slew rate control feature allows for rapid turn-on and low conduction losses. The device can be used with a wide range of gate drivers, from simple TTL levels to advanced CMOS drivers. The device also features a high temperature operating range of -55C to 175C, making it suitable for a variety of automotive and industrial applications.Overall, the AO6602L is an excellent choice for a wide range of power MOSFET array applications. Its advanced architecture helps ensure reliable operation in challenging environments. It features integrated features such as thermal shutdown and high-voltage protection which help ensure system reliability and longevity. Its flexibility and ease of use make it an excellent choice for systems requiring a high performance, high-channel count solution.

AO6601_001	Alpha & ...	0.0 $	1000	MOSFET N/P-CH 30V 6-TSOPM...
AO6604L_001	Alpha & ...	0.0 $	1000	MOSFET N/P-CH 20V 6-TSOPM...
AO6601L	Alpha & ...	--	1000	MOSFET P-CH 30V 6TSOPMosf...
AO6602_DELTA	Alpha & ...	0.0 $	1000	MOSFET N-CH 6TSOPMosfet A...
AO6601	Alpha & ...	--	1000	MOSFET N/P-CH 30V 6-TSOPM...
AO6602L	Alpha & ...	--	1000	MOSFET N/P-CH 30V 6-TSOPM...
AO6604	Alpha & ...	--	43	MOSFET N/P-CH 20V 6-TSOPM...
AO6608	Alpha & ...	--	1000	MOSFET ARRAY N/P-CH 30/20...