AO6608 Allicdata Electronics

AO6608 Discrete Semiconductor Products

Allicdata Part #:

785-1787-2-ND

Manufacturer Part#:

AO6608

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET ARRAY N/P-CH 30/20V 6TSOP
More Detail: Mosfet Array N and P-Channel Complementary 30V, 20...
DataSheet: AO6608 datasheetAO6608 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N and P-Channel Complementary
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 10V, 75 mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA, 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V, 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V, 510pF @ 10V
Power - Max: 1.25W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP
Description

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The AO6608 is an N-Channel MOSFET Array designed for low-side power switching applications. A MOSFET Array provides multiple transistors connected in parallel to optimize battery performance and protect against over current or short circuit conditions. It is ideal for battery-powered or low-voltage systems that require efficient, low-voltage power switching.

The AO6608 consists of two n-channel enhancement mode MOSFETs and includes over-current protection and built-in thermal shutdown. It is available in multiple packages making it easy to use in a variety of applications. It is designed to operate over the -40 to 150°C temperature range.

The AO6608 employs an N-Channel enhancement mode MOSFET Array architecture. A MOSFET Array is composed of multiple high-current, low-power devices that are connected in parallel, with each device acting as an individual switch. The AO6608 has two N-Channel MOSFETs that are connected in parallel for additional current carrying capability. The N-Channel MOSFETs are arranged so that the drain terminals of the two MOSFETs share a common junction and the source terminals are electrically isolated from each other.

The AO6608 is designed for drain current sensing applications. It consists of two closely matched N-Channel MOSFETs with a common source connected to a single power supply rail. A drain current is sensed between the three terminals connected to the drains of the two MOSFETs. This circuit provides efficient, low-voltage power switching and current sensing in one package.

The AO6608 can be used in applications such as low-side power switching, over-current protection, battery protection, and current limited switching. It is ideal for battery-powered and low-voltage systems that require efficient, low-voltage power switching. The wide operating temperature range and over-current protection make it a great choice for applications in a variety of industries including automotive, industrial, and consumer products.

The AO6608 is a versatile and robust switch solution for power switching applications with features including low-power operation, low-voltage switching, overcurrent protection and thermal shutdown. This N-Channel MOSFET Array is easy to use in a variety of applications, making it an ideal solution for power switching needs.

The specific data is subject to PDF, and the above content is for reference

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