AO6800L_003 Allicdata Electronics
Allicdata Part #:

AO6800L_003-ND

Manufacturer Part#:

AO6800L_003

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET 2N-CH 30V 3.4A 6-TSOP
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 3.4A 1.15W Sur...
DataSheet: AO6800L_003 datasheetAO6800L_003 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Power - Max: 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP
Description

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AO6800L_003 is a three-channel, low leakage and high-speed, transistor array, typically composed of a MOSFET and NPN transistors. In total, it contains eight transistors for controlling the application’s high-speed, high-power, and low leakage requirements. It usually comes in a quad flat no-lead (QFN) package.

This powerful transistor array can be used in a wide range of applications, such as motor driver, AC to DC converter, and power-efficiency control, etc. It is also widely used in power management, audio, telecommunications and laptop / desktop computer applications.

The primary benefit of the AO6800L_003 transistor array is that it allows for faster switching of power and increased power efficiency. The combination of its low on-resistance and fluctuations, along with its high-speed switching capability, provides notable improvements in power efficiency and conduction loss reduction. Furthermore, the low static leakage behavior of this transistor array ensures that it works stably and meets the demands of many high-power applications.

In terms of its working principle, the AO6800L_003 transistor array can be used to control the flow of current and voltage across a variety of voltage and current levels. It works by allowing a current or voltage to flow through the MOSFET and NPN transistors when a specific input signal is received. Furthermore, the array’s NPN transistors are protected from high-frequency noise, while MOSFETs protect against voltage spikes. In this way, it prevents the application from experiencing momentary power losses.

In addition to its powerful properties, the AO6800L_003 is also characterized by its low-power consumption, high stability and surge protection capability. The transistor array has a low power dissipation behavior and can be used for a wide range of power-efficient applications. Moreover, it provides excellent surge protection, which makes it suitable for high voltage and high-power applications. Moreover, its high-stability feature ensures that the application remains within its optimal operating conditions.

To sum up, the AO6800L_003 is an advanced three-channel, low leakage and high-speed transistor array, typically comprised of a MOSFET and NPN transistors. It boasts numerous features, such as low on-resistance, high-speed switching capability, low static leakage, low power dissipation and surge protection, which makes it an ideal choice for many types of high-power and digital applications.

The specific data is subject to PDF, and the above content is for reference

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