AO6800L Allicdata Electronics
Allicdata Part #:

AO6800L-ND

Manufacturer Part#:

AO6800L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH DUAL 30V 6TSOP
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 3.4A (Ta) 1.15...
DataSheet: AO6800L datasheetAO6800L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Part Status: Last Time Buy
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Power - Max: 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP
Description

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The AO6800L is a monolithic 6800-MHz broadband amplifier array that can be used for a variety of applications. It contains 14 independent amplifiers covering the 6800-MHz frequency range and features high gain, low noise figure, broad bandwidth, and low distortion. The device has an integrated power amplifier that can provide up to 2 Watts of output power. Additionally, the AO6800L offers excellent noise performance and is suitable for use in applications such as automotive multimedia, wireless communication, and HDTV.

The AO6800L is a high-performance RF amplifier array that utilizes advanced, highly reliable GaAs HBT process technology. The device features an integrated power amplifier to reduce solution size and improve performance. The amplifier array provides high gain, low noise figure, and low distortion, making it ideal for a variety of different applications. It is optimized for use in applications such as automotive multimedia, wireless communication, and HDTV. The device also has excellent broadband noise performance and can operate up to 6800 MHz.

The working principle of the AO6800L is based on the field effect transistor (FET) technology. The FET is a semiconductor device that can be used to control resistive and reactive components in circuits. In this case, the FET is used to allow the amplifying action to take place. The FET is connected to the input signal and the output signal is taken from the device. The input signal is amplified and the gain is controlled by the amount of current flowing through the FET. The output signal is then taken out from the amplifier.

The AO6800L is a powerful amplifier array and can be used for a wide range of applications. It is suitable for use in high frequency wireless systems, HDTV, automotive multimedia, and wireless communication. The device is also suitable for use in laboratories for testing various systems. It provides high gain, low noise figure, broad bandwidth, and low distortion, making it ideal for these applications.

In summary, the AO6800L is an ultra-wideband amplifier array that is designed for a variety of applications. It is based on FET technology and has an integrated power amplifier. It offers high gain, low noise figure, broad bandwidth, and low distortion, making it ideal for a variety of applications. Its features make it suitable for use in high frequency wireless systems, HDTV, automotive multimedia, and wireless communication.

The specific data is subject to PDF, and the above content is for reference

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