Allicdata Part #: | AO6808_101-ND |
Manufacturer Part#: |
AO6808_101 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET 2N-CH 20V 4.6A 6TSOP |
More Detail: | Mosfet Array 2 N-Channel (Dual) Common Drain 20V 4... |
DataSheet: | AO6808_101 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) Common Drain |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 4.6A |
Rds On (Max) @ Id, Vgs: | 23 mOhm @ 6A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 780pF @ 10V |
Power - Max: | 800mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | 6-TSOP |
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The AO6808_101 is a dual N-Channel 30V (D-S) MOSFET transistor array. The product family consists of six devices with different breakdown voltage ratings and channel types. This particular product has two N-Channel MOSFETs with a staggered voltage rating of 30V for the drain-source. It is widely used in applications such as motor drive, load switching, and DC/DC converters.
The AO6808_101 consists of a single package containing two logic level MOSFETs. Each of the two MOSFETs is fabricated on the same substrate, which is bonded to a single package. The product has an internal 100Ω resistor between the gates and sources for improved switching operation. It also has a low input capacitance and low RDS(on), making it suitable for high-speed switching applications.
The AO6808_101 is an enhancement mode device, which means the transistor is off when the gate voltage is zero. There are two possible methods of turning the device on. First, if the gate voltage is below a certain threshold value, then the Vgs must be increased beyond the threshold value (Vth) to "enhance" the channel and turn it on. Secondly, if the gate voltage is increased above Vth, the channel will then be enhanced and turned on by decreasing the gate voltage to a certain sweet spot value. This sweet spot value is known as the optimal operation point of the MOSFET, and it can be adjusted depending on the load requirements.
The AO6808_101 has a low gate-source input capacitance, allowing it to switch faster. The device also has an enhanced current handling capability and a combination of low RDS(on) and high breakdown voltage to reduce power losses. The output capability is further enhanced by the dual N-Chanel design, making it suitable for bidirectional load switching applications.
In addition, the AO6808_101 also has integrated ESD protection, which helps protect the device from electrostatic discharges and prevents inadvertent transitions of the MOSFETs. This device has an operating temperature range of -40°C to +125°C, which can be used in various industrial and commercial applications.
In conclusion, the AO6808_101 is a dual N-Channel 30V (D-S) MOSFET transistor array that is ideal for applications such as motor drive, load switching, and DC/DC converters. It features a high current handling capability, low input capacitance, low RDS(on) and high breakdown voltage, as well as integrated ESD protection. With its wide operating temperature range, this device is suitable for many industrial and commercial applications.
The specific data is subject to PDF, and the above content is for reference
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