AOK20B120E1 Discrete Semiconductor Products |
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Allicdata Part #: | 785-1750-ND |
Manufacturer Part#: |
AOK20B120E1 |
Price: | $ 2.44 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | IGBT 1200V 20A TO247 |
More Detail: | IGBT 1200V 40A 333W Through Hole TO-247 |
DataSheet: | AOK20B120E1 Datasheet/PDF |
Quantity: | 11 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 2.21760 |
10 +: | $ 1.97820 |
25 +: | $ 1.78013 |
100 +: | $ 1.62187 |
250 +: | $ 1.46364 |
500 +: | $ 1.31331 |
1000 +: | $ 1.10762 |
2500 +: | $ 1.05487 |
Power - Max: | 333W |
Supplier Device Package: | TO-247 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Test Condition: | 600V, 20A, 15 Ohm, 15V |
Td (on/off) @ 25°C: | -/134ns |
Gate Charge: | 60.5nC |
Input Type: | Standard |
Switching Energy: | 830µJ (off) |
Series: | Alpha IGBT™ |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 20A |
Current - Collector Pulsed (Icm): | 80A |
Current - Collector (Ic) (Max): | 40A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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AOK20B120E1 application field and working principle
AOK20B120E1 belongs to the category of transistors known as IGBTs – Single. It is an insulated gate bipolar transistor (IGBT) that acts like a switch, converting electric energy from positive to negative, or vice versa.IGBTs are used in many applications that require fast and powerful switching of high power electric current. For example, AOK20B120E1 can be used in the motor control and power electronics industry, as well as automotive industry, railway systems and power supplies.The AOK20B120E1 IGBT device is basically a combination of a bipolar junction transistor (BJT) and a MOSFET. It has the advantage of high current carrying capacity, high frequency performance and low switching losses, making it ideal for a variety of power conversion requirements.The working principle of AOK20B120E1 is based on the arrangement of collector, emitter and gate electrodes. When a voltage is applied on the gate electrode, a current signal is sent to the base of the Bipolar Junction Transistor (BJT), turning it on, which in turn turns on the IGBT. The IGBT can then be switched on and off with the voltage signal from the gate electrode.
There are several characteristics of the AOK20B120E1 IGBT device that make it superior in many applications. First, it has a high input impedance, meaning that it requires less power to operate than other transistors. Second, the IGBT has a fast switching speed, helping to improve the efficiency of power conversion applications. Finally, the IGBT has a low on-state voltage drop, reducing the heat generated, further improving power conversion efficiency.The AOK20B120E1 IGBT also offers a number of advantages in terms of safety. It provides short-circuit protection, over-temperature protection, and over-voltage protection, which helps to reduce the risks and hazards associated with power conversion applications.The AOK20B120E1 IGBT device is widely used in a variety of power conversion applications, including motor control and power electronics, automotive systems, railway systems, and power supplies. The device has many advantages, including fast switching speed, high input impedance, low on-state voltage drop, and safety features. It is a reliable, efficient and cost-effective device, making it ideal for a variety of power conversion applications.
The specific data is subject to PDF, and the above content is for reference
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