AOK20B65M2 Allicdata Electronics
Allicdata Part #:

785-1752-ND

Manufacturer Part#:

AOK20B65M2

Price: $ 2.30
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: IGBT 650V 20A TO247
More Detail: IGBT 650V 40A 227W Through Hole TO-247
DataSheet: AOK20B65M2 datasheetAOK20B65M2 Datasheet/PDF
Quantity: 223
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 2.09790
10 +: $ 1.87551
25 +: $ 1.68790
100 +: $ 1.53777
Stock 223Can Ship Immediately
$ 2.3
Specifications
Series: Alpha IGBT™
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A
Power - Max: 227W
Switching Energy: 580µJ (on), 280µJ (off)
Input Type: Standard
Gate Charge: 46nC
Td (on/off) @ 25°C: 26ns/123ns
Test Condition: 400V, 20A, 15 Ohm, 15V
Reverse Recovery Time (trr): 292ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Description

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The AOK20B65M2 is an insulated-gate bipolar transistor, commonly referred to as an IGBT, and is a single device. It is used in power electronics to provide power and control of a motor, completing or disrupting the paths and circuits to initiate or stop the motor. Depending on the application, IGBTs are typically chosen over power bipolar transistors due to their ability to handle large current spikes and swings.

The IGBT design combines the performance of a power MOSFET and a bipolar junction transistor, allowing for higher switching speeds and improved voltage control. They are typically used for applications such as power converters, motor controls, welding and lighting. The AOK20B65M2 model is designed to provide high frequency performance while minimizing losses and offering greater power efficiency over other types of transistor by reducing switching losses.

The AOK20B65M2 works through a switching principle. The switch is turned on, or turned off, by controlling the gate voltage. When the voltage at the gate is equal to, or greater than the voltage at the drain terminal, the device will turn on and a controlled current will flow from the gate to the drain. Conversely, when the gate voltage is less than the drain voltage, the device will turn off and drain current will stop.

The AOK20B65M2 offers a range of features and benefits for applications where high current is required when switching. This includes a wide operating voltage range of up to 900V (peak) and a current range of up to 25A (peak). It is also capable of switching speeds up to 35ns at 25A. This device also offers improved body-diode recovery times and a temperature range of -40 to 150°C.

The AOK20B65M2 device is also designed to reduce power losses and enhance efficiency in applications. This is due to its reduced switching losses, as well as its low saturation voltage and its integral soft turn-off or reverse recovery protection. The device also has a high frequency capability, making it suitable for switching applications such as inverters or motor controls.

In conclusion, the AOK20B65M2 IGBT is a single device designed for use in applications where high power, current and switching speeds are required. It offers a range of features that improve efficiency and reduce power losses, allowing for improved performance. Due to its high frequency switching capabilities, the AOK20B65M2 can be used for applications such as inverters, motor controls and welding.

The specific data is subject to PDF, and the above content is for reference

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