AOK20B60D1

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Introduction

AOK20B60D1 is a series of IGBTs (Insulated Gate Bipolar Transistors) produced by ABB, a global leader in power and automation technologies. This series is designed for robust solutions in medium and high-power switching applications. AOK20B60D1 IGBTs are available in single and dual packages with a maximum voltage of 600 V. Several features make this series ideal for many switching applications, such as high-voltage, high-speed applications, soft switching and other demanding switching operations. The main parameters of this series include the high blocking voltage of 600 V and power level of 100 A.

Application Field

AOK20B60D1 IGBTs offer various advantages, making them ideal for many switching applications. They can be used in a wide range of applications, from solar inverters and wind turbines to server power supplies and consumer electronics. In particular, they are suitable for high-frequency DPFC (digital power factor correction) applications due to their excellent performance in high-voltage and high-speed applications. In addition, these devices are suitable for industrial motor drives, as their low switching losses and short switching times reduce power losses and increase the system\'s efficiency. Finally, these devices are ideal for applications requiring high switching capability and ruggedness, such as soft switching.

Working Principle

AOK20B60D1 series IGBTs are based on the principle of voltage-driven operation due to their insulated gate structure. This type of IGBT consists of three parts, namely a p-channel junction field-effect transistor (JFET), an N-channel JFET, and a diode. The gate voltage is used to control the transistor\'s on/off state, allowing current to flow through the collector-emitter region when it is in the on state, and blocking current in the off state. When the gate voltage is above the threshold voltage, the p-channel JFET is activated, turning on the device and allowing current to flow through the collector-emitter channel. However, when the gate voltage is below the threshold voltage, the N-channel JFET is activated, turning off the device and blocking current from flowing through the collector-emitter channel. In addition, the diode connected in reverse direction ensures fast and clean switching.

Advantages

AOK20B60D1 IGBTs provide many advantages for medium and high-power switching applications. They offer high blocking voltage and low on-state voltage drop in combination with low switching losses. Furthermore, the series provides fast switching times and low susceptibility to noise interference due to its insulated gate structure. Additionally, they provide ruggedness and reliability due to the overpressure lifetime protection function. These advantages make these devices suitable for a variety of high-voltage and high-frequency switching applications.

Conclusion

AOK20B60D1 IGBTs are the ideal solution for medium and high-power switching applications thanks to their robust design and excellent performance. With a maximum blocking voltage of 600 V, fast switching times, and excellent ruggedness, these devices are suitable for a variety of applications, such as solar inverters, wind turbines, DPFC systems, motor drives and more. Furthermore, their insulated gate structure provides low susceptibility to noise interference, making them an excellent choice for high-voltage and high-frequency applications.

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