Allicdata Part #: | 785-1532-5-ND |
Manufacturer Part#: |
AOK20N60L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 600V 20A TO247 |
More Detail: | N-Channel 600V 20A (Tc) 417W (Tc) Through Hole TO-... |
DataSheet: | AOK20N60L Datasheet/PDF |
Quantity: | 226 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 417W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3680pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 74nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 370 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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AOK20N60L, a low gate charge MOSFET designed for medium current, high frequency applications, is seen in many commercial and industrial applications, such as motor control, audio amplifiers, power converters, power supplies, microwave ovens, and HVAC systems.
AOK20N60L is a low on-resistance, N-Channel enhancement-mode power MOSFET, particularly suited for modern high-performance switched-mode power supply (SMPS) and typical SMPS applications include lighting systems, welding equipment, and LCD displays. AOK20N60L is a medium current MOSFET with low on-state resistance. These devices provide improved gate charge x RDS(on) performance compared to other similar products.
The basic working principle of AOK20N60L is similar to that of any MOSFET. It has an N-type semiconductor material between the source and drain terminal. A gate terminal is added to control the electrical properties of the device. In the OFF condition, the gate terminal is prevented from creating any electron movement between the source and drain. In the ON condition, when the gate terminal is charged with a positive voltage, an electric field is created in the channel, allowing current to flow from the source to the drain and the drain-source voltage drop is reduced.
AOK20N60L have the features of high speed switching, high output conductance, high input impedance and low noise operation, the ON state drain-source voltage of the device is one-tenth the value of the ON state drain-source voltage of a normal MOSFET. Also, AOK20N60L is suitable for high bounce frequency applications.
The AOK20N60L uses N-channel MOSFETs with low gate charge, a key factor in reducing power losses. The low gate charge also reduces switching times and thus improves the efficiency of the circuit. It also reduces the voltage needed to turn the gate on or off and increases the allowable gate drive current. Additionally, the N-channel MOSFETs provide low on-state resistances and hence reduced power losses. Therefore, these MOSFETs can be used for many power switching applications, such as lighting systems, welding equipment, LCD displays, etc.
In conclusion, AOK20N60L is a N-channel MOSFET offering featuring low gate charge and low on-resistance. These features improve circuit efficiency and reduce power losses, making it well suited for application in medium current, high frequency switched-mode power supplies, motor controls, audio amplifiers and other power conversion applications. The low gate charge also reduces switching times thus improving the efficiency of the device.
The specific data is subject to PDF, and the above content is for reference
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