AOK20B120E2

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The AOK20B120E2 IGBT is a single transistor with a variety of applications and operating principles. An IGBT (Insulated Gate Bipolar Transistor) is a three-terminal semiconductor device that has an insulated gate at its base. The AOK20B120E2 IGBT is an IGBT with a current density of 120 A/cm2 and a voltage rating of 1200 V. It is also highly reliable with a breakdown voltage of +/- 150V.

The AOK20B120E2 IGBT is well-suited for a variety of applications, including power supplies, motor drives, audio amplifiers, medical equipment, LED lighting, and motor speed control. It is perfect for applications that require low conduction and switching losses, low noise levels, and heat dissipation.

The AOK20B120E2 IGBT operates on the principle of gate control. When a small input signal is applied to the gate terminal, it causes the current to flow from the emitter to the collector, forming a channel between them. This channel is called an “on channel”, and it allows the current to flow through in both directions. By altering the voltage applied to the gate terminal, the channel width can be adjusted, thus allowing for control of current flow.

In addition to its gate control principle, the AOK20B120E2 IGBT also has the ability to reduce surge and short-circuit currents. This is achieved by a strain gauge temperature / voltage function, which helps to protect the transistor against these types of failures.

The AOK20B120E2 IGBT is a single transistor device with a wide range of applications and diverse operating principles. It is well-suited for use in power supplies, motor drives, audio amplifiers, medical equipment, LED lighting, and motor speed control, among other applications. It is also highly reliable and can reduce surge and short-circuit currents. All of these benefits make it a great choice for any application where high-current and high-voltage power control is necessary.

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