
Allicdata Part #: | APT27GA90BD15-ND |
Manufacturer Part#: |
APT27GA90BD15 |
Price: | $ 5.61 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 900V 48A 223W TO247 |
More Detail: | IGBT PT 900V 48A 223W Through Hole TO-247 [B] |
DataSheet: | ![]() |
Quantity: | 238 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 5.09670 |
10 +: | $ 4.58451 |
25 +: | $ 4.17715 |
100 +: | $ 3.76973 |
250 +: | $ 3.46407 |
500 +: | $ 3.15841 |
1000 +: | $ 2.75087 |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | PT |
Voltage - Collector Emitter Breakdown (Max): | 900V |
Current - Collector (Ic) (Max): | 48A |
Current - Collector Pulsed (Icm): | 79A |
Vce(on) (Max) @ Vge, Ic: | 3.1V @ 15V, 14A |
Power - Max: | 223W |
Switching Energy: | 413µJ (on), 287µJ (off) |
Input Type: | Standard |
Gate Charge: | 62nC |
Td (on/off) @ 25°C: | 9ns/98ns |
Test Condition: | 600V, 14A, 10 Ohm, 15V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 [B] |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The APT27GA90BD15 is a n-channel enhancement mode insulated gate bipolar transistor (IGBT) from Infineon\'s OptIIs series. It is a single device designed for use in medium-frequency hard-switching applications, such as those found in medium-voltage industrial and automotive applications. This IGBT features a superior VCE(sat) linearity which provides improved efficiency and power density in comparison to its competition in the medium-frequency switching market.
Features of APT27GA90BD15
- Maximum blocking voltage of 1,500V
- Low-on-state resistance of 1.15 mΩ
- Soft-switching capability
- Tight VCE(sat) linearity specification
- Low conduction losses
- High-speed switching
- Minimal EMI/RFI susceptibility
Applications of APT27GA90BD15
The APT27GA90BD15 is designed for use in a variety of medium-voltage industrial and automotive applications, such as motor drives, generators, solar systems, resonant converters, and PFC. It can also be used in high-performance applications where switching frequency is of great importance.
Working Principle of APT27GA90BD15
The IGBT is essentially a bipolar transistor with an insulated gate. It consists of an emitter, a base, and a collector. The emitter is connected to the negative terminal of a DC power source, and the collector is connected to the positive terminal. The gate is used to control the current flow between the emitter and the collector, by applying a voltage to the gate. When a voltage is applied to the gate, it creates an electric field that controls the current flow. When the voltage is removed, the electric field dissipates and the current stops flowing.
The APT27GA90BD15 is a single device designed for use in medium-frequency hard-switching applications. It uses n-channel MOSFET technology to offer superior switching performance, with low conduction and switching losses. The device also offers a superior VCE(sat) linearity specification, which helps to improve efficiency. Additionally, the APT27GA90BD15 has a relatively low gate charge, which reduces switching losses and improves switching frequency. Finally, the IGBT also offers a tight EMI/RFI susceptibility specification, which helps to reduce radio interference.
Conclusion
The APT27GA90BD15 is an n-channel IGBT from Infineon\'s OptIIs series. It is designed for use in medium-frequency hard-switching applications, such as those found in medium-voltage industrial and automotive applications. The IGBT offers high-speed switching and low conduction losses, as well as a superior VCE(sat) linearity specification. Additionally, it has a tight EMI/RFI susceptibility specification, which helps to reduce radio interference in high-performance applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
APT2X41DC60J | Microsemi Co... | 36.97 $ | 1000 | DIODE MODULE 600V 40A SOT... |
APT2X101D30J | Microsemi Co... | 18.86 $ | 20 | DIODE MODULE 300V 100A IS... |
APT25GF120JCU2 | Microsemi Co... | 0.0 $ | 1000 | MOD IGBT NPT SIC CHOPPER ... |
APT2X150DL60J | Microsemi Co... | 22.17 $ | 11 | DIODE MODULE 600V 150A IS... |
APT20SCE170B | Microsemi Co... | 0.0 $ | 1000 | DIODE SCHOTTKY 1700V 20A ... |
APT28M120L | Microsemi Co... | 17.93 $ | 8 | MOSFET N-CH 1200V 29A TO2... |
APT26F120L | Microsemi Co... | 21.43 $ | 6 | MOSFET N-CH 1200V 27A TO-... |
APT20M19JVR | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 200V 112A SOT... |
APT20N60SC3G | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 600V 20.7A D3... |
APT2X31D20J | Microsemi Co... | 15.04 $ | 2 | DIODE MODULE 200V 30A ISO... |
APT2X20DC60J | Microsemi Co... | 24.05 $ | 1000 | DIODE MODULE 600V 20A SOT... |
APT2X30D100J | Microsemi Co... | 16.24 $ | 2 | DIODE MODULE 1KV 28A ISOT... |
APT2012LZGCK | Kingbright | 0.12 $ | 46000 | LED GREEN CLEAR 0805 SMDG... |
APT24M120L | Microsemi Co... | 13.53 $ | 1000 | MOSFET N-CH 1200V 24A TO-... |
APT2012ZGCK | Kingbright | -- | 18000 | LED GREEN CLEAR 0805 SMDG... |
APT25SM120B | Microsemi Co... | 0.0 $ | 1000 | POWER MOSFET - SICN-Chann... |
APT2X61DQ100J | Microsemi Co... | 16.48 $ | 3 | DIODE MODULE 1KV 60A ISOT... |
APT2X30DC60J | Microsemi Co... | 29.91 $ | 1000 | DIODE MODULE 600V 30A SOT... |
APT20SCD65S | Microsemi Co... | 0.0 $ | 1000 | DIODE SCHOTTKY 650V 20A D... |
APT2X60D20J | Microsemi Co... | 0.0 $ | 1000 | DIODE MODULE 200V 60A ISO... |
APT26M100JCU2 | Microsemi Co... | 22.39 $ | 1000 | MOSFET N-CH 1000V 26A SOT... |
APT20F50S | Microsemi Co... | 0.0 $ | 1000 | MOSFET N-CH 500V 20A D3PA... |
APT2X61D40J | Microsemi Co... | 15.58 $ | 5 | DIODE MODULE 400V 60A ISO... |
APT2X60DQ60J | Microsemi Co... | 0.0 $ | 1000 | DIODE MODULE 600V 60A ISO... |
APT2X60DC60J | Microsemi Co... | 48.38 $ | 1000 | DIODE MODULE 600V 60A SOT... |
APT20SCE65B | Microsemi Co... | 0.0 $ | 1000 | DIODE SCHOTTKY 650V 20A T... |
APT25GR120B | Microsemi Co... | 4.87 $ | 586 | IGBT 1200V 75A 521W TO247... |
APT2X101DQ100J | Microsemi Co... | 18.3 $ | 40 | DIODE MODULE 1KV 100A ISO... |
APT2012SYCK/J3-PRV | Kingbright | -- | 8000 | LED YELLOW CLEAR 0805 SMD... |
APT2X60DQ120J | Microsemi Co... | 15.93 $ | 33 | DIODE MODULE 1.2KV 60A IS... |
APT20M38SVRG | Microsemi Co... | 12.04 $ | 72 | MOSFET N-CH 200V 67A D3PA... |
APT2X31DQ60J | Microsemi Co... | 14.29 $ | 50 | DIODE MODULE 600V 30A ISO... |
APT20M45BVRG | Microsemi Co... | -- | 1000 | MOSFET N-CH 200V 56A TO-2... |
APT2012LSECK/J4-PRV | Kingbright | 0.11 $ | 14000 | LED ORANGE CLEAR 0805 SMD... |
APT28M120B2 | Microsemi Co... | 18.26 $ | 1000 | MOSFET N-CH 1200V 29A T-M... |
APT2X61D120J | Microsemi Co... | 21.32 $ | 17 | DIODE MODULE 1.2KV 53A IS... |
APT2X50DC60J | Microsemi Co... | 76.38 $ | 11 | DIODE MODULE 600V 50A SOT... |
APT20M38SVRG/TR | Microsemi Co... | 7.56 $ | 1000 | MOSFET N-CH 200V 67A D3PA... |
APT2X101D60J | Microsemi Co... | -- | 98 | DIODE MODULE 600V 100A IS... |
APT27GA90BD15 | Microsemi Co... | 5.61 $ | 238 | IGBT 900V 48A 223W TO247I... |
IGBT 1200V 9.6A 62.5W TO247-3IGBT 1200V...

IGBT 1200V TO247-3IGBT

IGBT 1200V TO247-3IGBT 1200V 57A 200W T...

IGBT 600V TO-247 COPAKIGBT

INTEGRATED CIRCUITIGBT 600V 6A 40W Surf...

POWER MOSFET TO-3IGBT
