APT27GA90BD15 Allicdata Electronics
Allicdata Part #:

APT27GA90BD15-ND

Manufacturer Part#:

APT27GA90BD15

Price: $ 5.61
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT 900V 48A 223W TO247
More Detail: IGBT PT 900V 48A 223W Through Hole TO-247 [B]
DataSheet: APT27GA90BD15 datasheetAPT27GA90BD15 Datasheet/PDF
Quantity: 238
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 5.09670
10 +: $ 4.58451
25 +: $ 4.17715
100 +: $ 3.76973
250 +: $ 3.46407
500 +: $ 3.15841
1000 +: $ 2.75087
Stock 238Can Ship Immediately
$ 5.61
Specifications
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 900V
Current - Collector (Ic) (Max): 48A
Current - Collector Pulsed (Icm): 79A
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 14A
Power - Max: 223W
Switching Energy: 413µJ (on), 287µJ (off)
Input Type: Standard
Gate Charge: 62nC
Td (on/off) @ 25°C: 9ns/98ns
Test Condition: 600V, 14A, 10 Ohm, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
Description

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The APT27GA90BD15 is a n-channel enhancement mode insulated gate bipolar transistor (IGBT) from Infineon\'s OptIIs series. It is a single device designed for use in medium-frequency hard-switching applications, such as those found in medium-voltage industrial and automotive applications. This IGBT features a superior VCE(sat) linearity which provides improved efficiency and power density in comparison to its competition in the medium-frequency switching market.

Features of APT27GA90BD15

  • Maximum blocking voltage of 1,500V
  • Low-on-state resistance of 1.15 mΩ
  • Soft-switching capability
  • Tight VCE(sat) linearity specification
  • Low conduction losses
  • High-speed switching
  • Minimal EMI/RFI susceptibility

Applications of APT27GA90BD15

The APT27GA90BD15 is designed for use in a variety of medium-voltage industrial and automotive applications, such as motor drives, generators, solar systems, resonant converters, and PFC. It can also be used in high-performance applications where switching frequency is of great importance.

Working Principle of APT27GA90BD15

The IGBT is essentially a bipolar transistor with an insulated gate. It consists of an emitter, a base, and a collector. The emitter is connected to the negative terminal of a DC power source, and the collector is connected to the positive terminal. The gate is used to control the current flow between the emitter and the collector, by applying a voltage to the gate. When a voltage is applied to the gate, it creates an electric field that controls the current flow. When the voltage is removed, the electric field dissipates and the current stops flowing.

The APT27GA90BD15 is a single device designed for use in medium-frequency hard-switching applications. It uses n-channel MOSFET technology to offer superior switching performance, with low conduction and switching losses. The device also offers a superior VCE(sat) linearity specification, which helps to improve efficiency. Additionally, the APT27GA90BD15 has a relatively low gate charge, which reduces switching losses and improves switching frequency. Finally, the IGBT also offers a tight EMI/RFI susceptibility specification, which helps to reduce radio interference.

Conclusion

The APT27GA90BD15 is an n-channel IGBT from Infineon\'s OptIIs series. It is designed for use in medium-frequency hard-switching applications, such as those found in medium-voltage industrial and automotive applications. The IGBT offers high-speed switching and low conduction losses, as well as a superior VCE(sat) linearity specification. Additionally, it has a tight EMI/RFI susceptibility specification, which helps to reduce radio interference in high-performance applications.

The specific data is subject to PDF, and the above content is for reference

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