Allicdata Part #: | APT27GA90BD15-ND |
Manufacturer Part#: |
APT27GA90BD15 |
Price: | $ 5.61 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 900V 48A 223W TO247 |
More Detail: | IGBT PT 900V 48A 223W Through Hole TO-247 [B] |
DataSheet: | APT27GA90BD15 Datasheet/PDF |
Quantity: | 238 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 5.09670 |
10 +: | $ 4.58451 |
25 +: | $ 4.17715 |
100 +: | $ 3.76973 |
250 +: | $ 3.46407 |
500 +: | $ 3.15841 |
1000 +: | $ 2.75087 |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | PT |
Voltage - Collector Emitter Breakdown (Max): | 900V |
Current - Collector (Ic) (Max): | 48A |
Current - Collector Pulsed (Icm): | 79A |
Vce(on) (Max) @ Vge, Ic: | 3.1V @ 15V, 14A |
Power - Max: | 223W |
Switching Energy: | 413µJ (on), 287µJ (off) |
Input Type: | Standard |
Gate Charge: | 62nC |
Td (on/off) @ 25°C: | 9ns/98ns |
Test Condition: | 600V, 14A, 10 Ohm, 15V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 [B] |
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The APT27GA90BD15 is a n-channel enhancement mode insulated gate bipolar transistor (IGBT) from Infineon\'s OptIIs series. It is a single device designed for use in medium-frequency hard-switching applications, such as those found in medium-voltage industrial and automotive applications. This IGBT features a superior VCE(sat) linearity which provides improved efficiency and power density in comparison to its competition in the medium-frequency switching market.
Features of APT27GA90BD15
- Maximum blocking voltage of 1,500V
- Low-on-state resistance of 1.15 mΩ
- Soft-switching capability
- Tight VCE(sat) linearity specification
- Low conduction losses
- High-speed switching
- Minimal EMI/RFI susceptibility
Applications of APT27GA90BD15
The APT27GA90BD15 is designed for use in a variety of medium-voltage industrial and automotive applications, such as motor drives, generators, solar systems, resonant converters, and PFC. It can also be used in high-performance applications where switching frequency is of great importance.
Working Principle of APT27GA90BD15
The IGBT is essentially a bipolar transistor with an insulated gate. It consists of an emitter, a base, and a collector. The emitter is connected to the negative terminal of a DC power source, and the collector is connected to the positive terminal. The gate is used to control the current flow between the emitter and the collector, by applying a voltage to the gate. When a voltage is applied to the gate, it creates an electric field that controls the current flow. When the voltage is removed, the electric field dissipates and the current stops flowing.
The APT27GA90BD15 is a single device designed for use in medium-frequency hard-switching applications. It uses n-channel MOSFET technology to offer superior switching performance, with low conduction and switching losses. The device also offers a superior VCE(sat) linearity specification, which helps to improve efficiency. Additionally, the APT27GA90BD15 has a relatively low gate charge, which reduces switching losses and improves switching frequency. Finally, the IGBT also offers a tight EMI/RFI susceptibility specification, which helps to reduce radio interference.
Conclusion
The APT27GA90BD15 is an n-channel IGBT from Infineon\'s OptIIs series. It is designed for use in medium-frequency hard-switching applications, such as those found in medium-voltage industrial and automotive applications. The IGBT offers high-speed switching and low conduction losses, as well as a superior VCE(sat) linearity specification. Additionally, it has a tight EMI/RFI susceptibility specification, which helps to reduce radio interference in high-performance applications.
The specific data is subject to PDF, and the above content is for reference
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