APT20M38SVRG/TR Discrete Semiconductor Products |
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Allicdata Part #: | APT20M38SVRG/TR-ND |
Manufacturer Part#: |
APT20M38SVRG/TR |
Price: | $ 7.56 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 200V 67A D3PAK |
More Detail: | N-Channel 200V 67A (Tc) 370W (Tc) Surface Mount D3... |
DataSheet: | APT20M38SVRG/TR Datasheet/PDF |
Quantity: | 1000 |
400 +: | $ 6.80287 |
Series: | POWER MOS V® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 67A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 38 mOhm @ 33.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 225nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 6120pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 370W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D3Pak |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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The APT20M38SVRG/TR is a single, enhancement-mode, N-channel, power MOSFET (metal-oxide-semiconductor field-effect transistor) from Columbus Electric. It is designed to switch between source and drain with low on-state resistance and high limiting current when a gate voltage is applied to the device.This particular type of MOSFET features an exposed gate contact pad, which provides a direct contact to the gate when soldered during assembly. Additionally, it is designed with an integral body diode, decreasing external components and simplifying the circuit design. The part also has an extremely low gate threshold voltage, which is helpful when dealing with large signal swings or when trying to power digital logic with a small voltage source. The APT20M38SVRG/TR is capable of handling up to 20 Amps of current and operates from -55°C to +175°C. It is well-suited to applications such as high-voltage switching, inrush current limiting, general switching and linear applications. Its high saturated drain current and fast switching characteristics makes it a great choice for power conversion and high-current switching applications.In high-voltage switching applications, the APT20M38SVRG/TR provides excellent on-state resistance and fast switching speeds. This helps to reduce ripple noise and train switching losses, which are common issues with lower gate threshold voltage MOSFETs.Inrush current limiting applications, the integral body diode greatly reduces the amount of devices required, which helps to reduce system cost and size.In general switching applications, the APT20M38SVRG/TR is an efficient and reliable option. It has a very low switching threshold voltage, which helps reduce power consumption and can also help to reduce the effects of noise on the circuit. The part boasts excellent signal integrity and switching characteristics, making it well-suited for signal integrity and noise immunity applications.In linear applications, the APT20M38SVRG/TR is a great choice for high-current, high-speed circuits. Its low on-state resistance ensures that the linear operation will be accurate and efficient. Additionally, it is capable of operating in high-temperature environments without compromising performance, which makes it ideal for applications such as automotive.The APT20M38SVRG/TR is one of the most versatile MOSFETs on the market and offers an array of features and benefits. Its low on-state resistance, high limiting current, and low gate threshold voltage make it ideal for a wide range of applications. Whether it’s for high-voltage switching, inrush current limiting, general switching, or linear applications, the APT20M38SVRG/TR is a reliable and efficient choice.
The specific data is subject to PDF, and the above content is for reference
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