Allicdata Part #: | APT25GR120B-ND |
Manufacturer Part#: |
APT25GR120B |
Price: | $ 4.87 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 1200V 75A 521W TO247 |
More Detail: | IGBT NPT 1200V 75A 521W Through Hole TO-247 |
DataSheet: | APT25GR120B Datasheet/PDF |
Quantity: | 586 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 4.42260 |
10 +: | $ 3.97782 |
25 +: | $ 3.62401 |
100 +: | $ 3.27039 |
250 +: | $ 3.00525 |
500 +: | $ 2.74009 |
1000 +: | $ 2.38652 |
Series: | -- |
Packaging: | Bulk |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | NPT |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 75A |
Current - Collector Pulsed (Icm): | 100A |
Vce(on) (Max) @ Vge, Ic: | 3.2V @ 15V, 25A |
Power - Max: | 521W |
Switching Energy: | 742µJ (on), 427µJ (off) |
Input Type: | Standard |
Gate Charge: | 203nC |
Td (on/off) @ 25°C: | 16ns/122ns |
Test Condition: | 600V, 25A, 4.3 Ohm, 15V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The APT25GR120B is a high current IGBT module that uses advanced technology to provide a high level of electrical performance. The device is capable of handling up to 19 A of current and provides a low gate resistance of 0.2 Ω. It also has an isolation voltage of 825 V and it is rated to operate at temperatures up to 125°C. The device is specifically designed to be used in DC-DC converters, high power switching applications, high power LED drivers, and AC inverters.
An IGBT (Insulated Gate Bipolar Transistor) is a type of power semiconductor that acts as a switch. It is a four-terminal device with two terminals for the gate, two for the collector, and one for the emitter. The gate terminal is used to control the flow of current through the other three terminals. When a voltage is applied to the gate, a large electric field is generated that causes current to flow between the collector and emitter. When the voltage is removed, the electric field is removed and the current stops.
The APT25GR120B can operate in three modes: amplitude modulation (AM), pulse width modulation (PWM), and forced-commutation (FC). In AM mode, the device functions like a regular transistor and is used to switch large currents quickly. In PWM mode, the device is used to control the speed of a motor or other load and can be used in both DC-DC and AC inverters. In FC mode, the device is used to quickly switch large currents, even when the applied voltage is not high enough to turn the device on fully. This is used in applications such as welders, where the current must be switched on or off rapidly without the need for external control circuitry.
The working principle of the APT25GR120B IGBT module is simple but effective. When a voltage is applied to the gate, a large electric field is generated that causes current to flow between the collector and emitter. The device can operate in three modes depending on the voltage and current applied to the gate. In AM mode, the device functions like a regular transistor and is used to switch large currents quickly. In PWM mode, the device is used to control the speed of a motor or other load and can be used in both DC-DC and AC inverters. In FC mode, the device is used to quickly switch large currents, even when the applied voltage is not high enough to turn the device on fully. This makes the APT25GR120B an ideal device for a range of power switching applications.
The specific data is subject to PDF, and the above content is for reference
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