APT25GR120B Allicdata Electronics
Allicdata Part #:

APT25GR120B-ND

Manufacturer Part#:

APT25GR120B

Price: $ 4.87
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT 1200V 75A 521W TO247
More Detail: IGBT NPT 1200V 75A 521W Through Hole TO-247
DataSheet: APT25GR120B datasheetAPT25GR120B Datasheet/PDF
Quantity: 586
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 4.42260
10 +: $ 3.97782
25 +: $ 3.62401
100 +: $ 3.27039
250 +: $ 3.00525
500 +: $ 2.74009
1000 +: $ 2.38652
Stock 586Can Ship Immediately
$ 4.87
Specifications
Series: --
Packaging: Bulk 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Power - Max: 521W
Switching Energy: 742µJ (on), 427µJ (off)
Input Type: Standard
Gate Charge: 203nC
Td (on/off) @ 25°C: 16ns/122ns
Test Condition: 600V, 25A, 4.3 Ohm, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The APT25GR120B is a high current IGBT module that uses advanced technology to provide a high level of electrical performance. The device is capable of handling up to 19 A of current and provides a low gate resistance of 0.2 Ω. It also has an isolation voltage of 825 V and it is rated to operate at temperatures up to 125°C. The device is specifically designed to be used in DC-DC converters, high power switching applications, high power LED drivers, and AC inverters.

An IGBT (Insulated Gate Bipolar Transistor) is a type of power semiconductor that acts as a switch. It is a four-terminal device with two terminals for the gate, two for the collector, and one for the emitter. The gate terminal is used to control the flow of current through the other three terminals. When a voltage is applied to the gate, a large electric field is generated that causes current to flow between the collector and emitter. When the voltage is removed, the electric field is removed and the current stops.

The APT25GR120B can operate in three modes: amplitude modulation (AM), pulse width modulation (PWM), and forced-commutation (FC). In AM mode, the device functions like a regular transistor and is used to switch large currents quickly. In PWM mode, the device is used to control the speed of a motor or other load and can be used in both DC-DC and AC inverters. In FC mode, the device is used to quickly switch large currents, even when the applied voltage is not high enough to turn the device on fully. This is used in applications such as welders, where the current must be switched on or off rapidly without the need for external control circuitry.

The working principle of the APT25GR120B IGBT module is simple but effective. When a voltage is applied to the gate, a large electric field is generated that causes current to flow between the collector and emitter. The device can operate in three modes depending on the voltage and current applied to the gate. In AM mode, the device functions like a regular transistor and is used to switch large currents quickly. In PWM mode, the device is used to control the speed of a motor or other load and can be used in both DC-DC and AC inverters. In FC mode, the device is used to quickly switch large currents, even when the applied voltage is not high enough to turn the device on fully. This makes the APT25GR120B an ideal device for a range of power switching applications.

The specific data is subject to PDF, and the above content is for reference

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