Allicdata Part #: | APT28M120B2-ND |
Manufacturer Part#: |
APT28M120B2 |
Price: | $ 18.26 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 1200V 29A T-MAX |
More Detail: | N-Channel 1200V 29A (Tc) 1135W (Tc) Through Hole T... |
DataSheet: | APT28M120B2 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 16.60050 |
30 +: | $ 14.10800 |
120 +: | $ 13.11220 |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
Package / Case: | TO-247-3 Variant |
Supplier Device Package: | T-MAX™ [B2] |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1135W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9670pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 300nC @ 10V |
Series: | POWER MOS 8™ |
Rds On (Max) @ Id, Vgs: | 560 mOhm @ 14A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 29A (Tc) |
Drain to Source Voltage (Vdss): | 1200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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APT28M120B2 is a type of single drain MOSFET that offers a variety of benefits when used in applications across a wide range of industries. In this article, we\'ll explore the application field and working principle of the APT28M120B2 device.
Types of MOSFETs
MOSFETs (Metal Oxide Semiconductor FETs) are the basic element used in many applications such as power amplifiers and DC to DC converters. They are generally classified into two types: enhancement and depletion. The most commonly used MOSFET is the enhancement type, which has three main types of operation, depending on the type of gate drive applied.
Working Principle of the APT28M120B2
The APT28M120B2 is a depletion-type MOSFET with a gate-driven drain voltage. It is a P-channel device, meaning it is normally off when the gate voltage is small. However, when the gate voltage is increased, the current flows from the drain to the source. This transistor can pass a significant amount of current when it is on and, when off, blocks a significant voltage due to its good body diode characteristic.
The working principle of the APT28M120B2 is based on the field effect. It uses an electric field that is created between the gate and the two source/drain terminals. By varying the amount of charge on the gate, the device can either be turned on or off. This allows for efficient use of the device and a wide operating temperature range. The device also has high transconductance, which is the ability to control a large number of electrons.
Applications for APT28M120B2
APT28M120B2 is an ideal MOSFET for use in numerous applications. It can be used in motor control, power supply, speed control, and load switching. The device can also be used in analog applications and systems with high switching speeds. It is also suitable for high-frequency applications, such as radio frequency (RF) signal amplification, because of its low turn-on and turn-off times.
The APT28M120B2 is a robust MOSFET and is capable of providing high-quality service in harsh environments, such as extreme temperature, humidity, and vibration. It is also resistant to reverse biasing and electron impact damage, which contributes to its long service life.
In conclusion, the APT28M120B2 is an excellent choice for applications in various industries. Its high transconductance, long service life, and ease of use make it a reliable and cost-efficient solution for power control.
The specific data is subject to PDF, and the above content is for reference
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