Allicdata Part #: | APT24M120L-ND |
Manufacturer Part#: |
APT24M120L |
Price: | $ 13.53 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 1200V 24A TO-264 |
More Detail: | N-Channel 1200V 24A (Tc) 1040W (Tc) Through Hole T... |
DataSheet: | APT24M120L Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 12.30420 |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
Package / Case: | TO-264-3, TO-264AA |
Supplier Device Package: | TO-264 [L] |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1040W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8370pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 260nC @ 10V |
Series: | POWER MOS 8™ |
Rds On (Max) @ Id, Vgs: | 680 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drain to Source Voltage (Vdss): | 1200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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APT24M120L is a N-channel MOSFET device from Alpha & Omega Semiconductor Company (AOS). It is a single transistor package which can be used in applications such as power conversion, DC-DC converters, amplifiers, etc. The device is based on a Vertical MOSFET technology, which utilizes a 3D vertical multi-gated MOSFET structure for improved performance compared to traditional planar MOSFETs.
This MOSFET is an enhancement-type device, meaning that its threshold voltage is greater than zero. When the Gate-Source voltage is greater than the threshold voltage, then the device will turn “ON” and current may flow between the Drain and Source. When the Gate-Source voltage is less than the threshold voltage, then the device will turn “OFF” and no current will flow between the Drain and Source. This MOSFET serves as a switch, with its Gate-Source voltage controlling whether or not current can flow through it.
The APT24M120L comes in an SMPAK TO-252-2 package, which is a surface mount package. The package is designed to have a low profile, aiding in thermal dissipation and enabling its use in smaller, more compact designs. It is also designed to reduce moisture sensitivity, making it suitable for reflow soldering processes. The device is rated for an operating temperature of -55°C to +150°C and a maximum junction temperature of 175°C.
In terms of performance, the APT24M120L offers a Drain-Source breakdown voltage of 120V, a maximum Drain current of 24A, and a total gate charge of Qg of 24nC. Its on-resistance is rated at RDS(on) of 8.7mΩ and its on-state drain current is rated at ID(on) of 140A. It also has a low gate threshold voltage of VGS(th) of 1.75V and a high input capacitance of Ciss of 396pF.
The APT24M120L can be used in many applications such as in AC-DC and DC-DC converters, on-board motor drives, solar inverters and automotive inverters. It can also be used as an enhancement-type switch in DC-DC converters, amplifiers, and battery management systems. Its high performance, low on-resistance, low gate threshold voltage and high input capacitance make it an ideal choice for a wide range of applications.
To summarize, the APT24M120L is a N-channel MOSFET device which is based on a Vertical MOSFET technology and comes in an SMPAK TO-252-2 package. It is an enhancement-type device, meaning that its threshold voltage is greater than zero and it serves as a switch with its Gate-Source voltage controlling whether or not current can flow through it. The device offers a Drain-Source breakdown voltage of 120V, a maximum Drain current of 24A, RDS(on) of 8.7mΩ, ID(on) of 140A, a low gate threshold voltage of VGS(th) of 1.75V and a high input capacitance of Ciss of 396pF. It can be used in many applications such as AC-DC and DC-DC converters, on-board motor drives, solar inverters and automotive inverters, and amplifiers, making it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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