AS7C1026B-10TCN Allicdata Electronics
Allicdata Part #:

1450-1197-5-ND

Manufacturer Part#:

AS7C1026B-10TCN

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 1M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 1Mb (64K x 16) Paral...
DataSheet: AS7C1026B-10TCN datasheetAS7C1026B-10TCN Datasheet/PDF
Quantity: 311
Stock 311Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

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AS7C1026B-10TCN Memory Application Field and Working Principle

AS7C1026B-10TCN is a small-sized serial access memory device developed by Advanced Micro Devices (AMD). It is a memory device that uses serial access technology, which allows it to store multiple bits of data in a single location. This device is widely used in a variety of applications, including embedded systems, communications networks, robotics, security, industrial automation, and automotive applications.The AS7C1026B-10TCN is a ten-transistor memory (TPM) device, which is the most popular type in the market. It is designed to store 8-bit data words in a single memory cell, and can hold up to 256 bits of data in total. The device is designed in such a way that data stored in the memory cell is accessed serially, allowing a single device to store multiple bytes of data quickly and efficiently.The AS7C1026B-10TCN memory device has several advantages that make it ideal for embedded applications, including its small size and low cost. It also has a low power consumption and high speed, making it suitable for communication and process control applications. Additionally, the device is resistant to environmental and mechanical stresses, which makes it ideal for use in industrial applications.The working principle of the AS7C1026B-10TCN is relatively simple. The device is composed of several transistor-linked cells that are connected in series, and each of these cells can store 8 bits of data. When a write command is provided, the data is written to the memory cell, and when a read command is issued, the stored data is accessed serially. This allows for a high degree of data accuracy, as well as fast access times.The AS7C1026B-10TCN memory device is an ideal choice for a variety of different applications due to its small size, low cost, and high speed. It is well-suited for use in embedded systems, communications networks, robots, security, industrial automation, and automotive applications, allowing for efficient data storage and retrieval. It is also designed for use in low-power devices, making it an ideal choice for mobile applications.Finally, the device is highly tolerant of environmental stresses, making it suitable for use in industrial applications.

The specific data is subject to PDF, and the above content is for reference

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