Allicdata Part #: | 1450-1043-ND |
Manufacturer Part#: |
AS7C1024B-12TCN |
Price: | $ 1.93 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Alliance Memory, Inc. |
Short Description: | IC SRAM 1M PARALLEL 32TSOP I |
More Detail: | SRAM - Asynchronous Memory IC 1Mb (128K x 8) Paral... |
DataSheet: | AS7C1024B-12TCN Datasheet/PDF |
Quantity: | 130 |
1 +: | $ 1.74510 |
10 +: | $ 1.56681 |
25 +: | $ 1.54224 |
50 +: | $ 1.53796 |
156 +: | $ 1.37425 |
312 +: | $ 1.32962 |
624 +: | $ 1.32466 |
1092 +: | $ 1.23370 |
5148 +: | $ 1.11628 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Asynchronous |
Memory Size: | 1Mb (128K x 8) |
Write Cycle Time - Word, Page: | 12ns |
Access Time: | 12ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 32-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 32-TSOP I (8x18.4) |
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Memory is an important aspect to consider when choosing hardware for a specific task, and AS7C1024B-12TCN is a reliable part of memory technology. This device is an 8K x 8 bit CMOS static RAM organized as 1K words of 8 bits each, and is designed and manufactured to operate over the industrial temperature range of -40°C to +85°C. This static RAM has achieved an industry-leading performance and stability. Its fast access time or cycle time combined with its low power consumption provide the ideal combination for many applications.
Application Field
The AS7C1024B-12TCN is suitable for a broad range of electronics applications, ranging from embedded systems to battery-operated products such as digital watches, calculators, and medical equipment. It is a functional RAM for use in a wide variety of applications that require a small memory device with a fast access time. This device is ideal for use with microprocessors, microcontrollers and other digital logic devices.
Working Principle
The AS7C1024B-12TCN is based on the 6-transistor (6T) cell architecture. This 3-state device consists of 8K bits organized as 1K words. It is made up of a CMOS silicon gate technology and can achieve access times as low as 10ns. The device operates on a single 5 Volt power supply and has a static standby current of only 100µA max. This static RAM can be written to by applying the appropriate control signals to the specified I/O pins. Once the memory cell is written, the contents will remain until it is rewritten or the power is removed from the device.
The read operation of this device works by applying the data address on the address pins and then asserting the read control signal. The data stored in the designated address will appear on the output pins. To write data, the address pins and data must first be applied and then the Write signal must be asserted. The write process is also accomplished in one cycle.
The AS7C1024B-12TCN is a robust, high-performance static RAM device. Its outstanding characteristics such as fast access time, low power consumption, and extended temperature range make it an ideal device for a wide array of applications. By combining fast access time with low power consumption, this device makes it an attractive choice for many different types of applications.
The specific data is subject to PDF, and the above content is for reference
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