AS7C34098A-20TIN

Series:	--
Packaging:	Tray
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Asynchronous
Memory Size:	4Mb (256K x 16)
Write Cycle Time - Word, Page:	20ns
Access Time:	20ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	44-TSOP (0.400", 10.16mm Width)
Supplier Device Package:	44-TSOP II

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What is the AS7C34098A-20TIN Chip?

The AS7C34098A-20TIN (AS7C34098A) is a high-performance CMOS synchronous static randomaccess memory device (SRAM) made of silicon and organometallic compounds. The AS7C34098A is designedwith high-speed performance and full 10ns cycle times. It is ideal for applications that require fastread/write times, low power consumption, and high data retention.

AS7C34098A-20TIN Application Field

The AS7C34098A-20TIN is a versatile chip used in a wide range of applications. In automated assembly systems,the AS7C34098A memory devices help store useful values, hold intermediate processing data, andperform memory functions such as storage, reading, and writing of data. In printers, AS7C34098A chips areused to store printer settings, fonts, and other job-specific information. It is also used in medicalimaging systems to store images and associated data, as well as in retail systems to store customeraccount information.The AS7C34098A chip is also used to store code in embedded programmable logic systems. Theseare general-purpose programmable logic devices (PLDs) used to store and execute a program code.They are often used in consumer electronics and automotive systems to control basic logic functions.

AS7C34098A-20TIN Working Principle

The AS7C34098A chip operates by storing data in a static random access memory (SRAM) cell. An SRAM cellconsists of four transistors - two is used to store a bit of information and two for access. A cell is formed whenthe two cells are interconnected.Data is written to the SRAM cell by applying logic-high or logic-low voltages to the gates of the transistors. Thelogic-high voltage will cause the cell to store a \'1\' and logic-low voltage causes the cell to store a \'0\'. Toread the data, the gates are accessed and the stored data is retrieved - when a ‘0’ is stored the gates will handle alow voltage current and if a ‘1’ is stored the gates will produce a high-voltage current.

Conclusion

The AS7C34098A-20TIN is a high-performance CMOS synchronous static random access memory (SRAM) chip. This versatile chip can be used in a wide range of applications from automated assembly systems to consumer electronics. It works by using four transistors to store data in a single memory cell by applying high and low voltages. This chip is ideal for applications that require fast read/write times, low power consumption, and high data retention.

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