AS7C31024B-10TCNTR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Asynchronous
Memory Size:	1Mb (128K x 8)
Write Cycle Time - Word, Page:	10ns
Access Time:	10ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	32-TSOP I

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AS7C31024B-10TCNTR Memory: Application Field and Working Principle

In today\'s technology world an ever widening range of emerging trends and tools are rapidly changing how we access and utilize memory. The AS7C31024B-10TCNTR memory module is one such latest innovation, enabling efficient memory usage for a large variety of applications.This memory module, also referred to as an “External SRAM”, consists of an array of Static RAM cell structures that are connected to address and data lines. Thanks to their fast access time of 6 ns, they are the ideal memory solution for various industrial and consumer applications such as: embedded system design; data storage and retrieval; graphical displays; industrial automation; closed-loop control systems; data logging; medical imaging; and many more.Given its versatility, the AS7C31024B-10TCNTR is a smart device for controlling, storing, and managing digital data. The memory device enables a low-latency Random Access Memory (RAM) provided to the system for easy navigation. The interface of the module allows for easy expandability, adding additional SRAM to any system without having to add additional hardware.At the heart of the AS7C31024B-10TCNTR is its synchronous static random access memory (SRAM) array, composed of transistors or flip-flops and connected to address and control lines. Each one of the cells contains a logic gate, which is connected to an access transistor enabling the cell to be selected and read/written to. Depending on the type of SRAM, the cells can either be used as 2-port or 4-port memory. A 2-port SRAM offers two ports: the input port and the output port, while a 4-port SRAM will have two additional ports: the input/write port and the output/write port.The AS7C31024B-10TCNTR memory module offers an operating voltage range of 2.7V and 3.6V and a write cycle time of 140 ns, allowing for a stable operations of the device over a wide range of conditions. The on-board control logic allows for a much faster response time and dynamic power management, ensuring the device is able to maintain optimal performance during applications that require high read and write rates.Besides offering a reliable, stable and efficient memory, the AS7C31024B-10TCNTR also provides support for Error Detection and Correction (EDC), thanks to its built-in Exclusive OR (XOR) and cyclic redundancy check (CRC). These are a set of techniques that detect and correct any errors present in both the data and/or address line, so to secure the memory against any failures.In conclusion, the AS7C31024B-10TCNTR provides a fast and efficient memory solution, with reliable EDC to guarantee data integrity. It is a cost-effective option for embedded systems, industrial automation, communication systems, medical instruments, and a wide range of scenarios where a high speed, reliable and stable memory solution is required.

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