AT24C04N-10SC-2.5

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Introduction

AT24C04N-10SC-2.5 is an electrically eraseable programmable read-only-memory (EEPROM) which belongs to the memory category.

Application Field

The AT24C04N-10SC-2.5 is suitable for use in applications where the data must be retained (even during repeated power cycling), yet still require to be updated. Examples of where the device is suitable include microprocessors and peripherals, biomedical systems, automotive systems, consumer and industrial products, and general applications where low-cost, low-power, high endurance, and high-reliability memory is needed.

Features/Benefits

The AT24C04N-10SC-2.5 has a wide range of features and benefits. It offers an extended write endurance of 1 million write cycles. Moreover, it can operate over a wide temperature range of -40°C to +85°C and has 16 Kbits of memory. The device also operates with a single power supply and has Self-Timed Write Cycle with a maximum polling time of 500 ms. Additionally, the AT24C04N-10SC-2.5 features write protect and block erasure protection which increases the reliability of the device.

Working Principle

The AT24C04N-10SC-2.5 has a unique architecture which consists of an internal 2 kbit memory cell array and a dedicated EEPROM controller. The internal memory cell array is organized in 1kbit segments and has 256-bit pages. The data written to the device need to be preloaded with the internal write cycle. Once the EEPROM is writing the data, the devices’ write operations begin. The controller automatically times each write operation, thus ensuring the data within the cell array is written correctly. After the write cycle is complete, the programmed data will remain within the cell array until the next write cycle begins.

Conclusion

The AT24C04N-10SC-2.5 is an EEPROM which belongs to the memory category. It has a wide range of features and benefits which enable it to be used in various applications. The architecture of the device consists of an internal memory cell array and a dedicated EEPROM controller which times the write operations to ensure the data is written correctly. It can be used in applications which require low-cost, low-power, high endurance, and high-reliability memory.

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