AT24C164-10SC-2.5

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory

AT24C164-10SC-2.5 is an advanced ferroelectric Random Access Memory (FRAM), which is specifically designed for applications that require low power, high reliability and fast operation. Unlike other common types of memory, FRAM does not require batteries or memory refresh circuitry to store data. The memory consists of a ferroelectric material layer sandwich between two conductors, typically metal electrodes. The electrons move between ferroelectric layers in order to form a diffuse electrical field. The electrons form a “diffuse layer” which can be used to store data.

One of the benefits of using AT24C164-10SC-2.5 is that it can store up to 64Kb (32,000 bytes) of data in a tiny package, making it easier for designs in which space is at a premium. The data retention time is also very high – up to ten years. The access time for reading the data from the chip is fast, typically less than 20 milliseconds.

The high data retention and fast response time of the AT24C164-10SC-2.5 makes it ideal for a wide range of applications. These include industrial, automotive and consumer applications, where fast retrieval and long-term storage of data are necessary. As an example, the device can be used as a development environment in which the developer needs quick access to data stored in the memory over an extended period of time. Further, the device can be used in mobile applications such as cell phones and PDA\'s where long battery life and low power requirements are important.

In addition, the AT24C164-10SC-2.5 is also ideal for embedded applications such as adaptive systems, in which the data stored in the chip need to be modified in real time. This is because the device is capable of writing to the ferroelectric material layer which is sandwiched between two conductors – allowing for rapid programming of the memory device.

Finally, the AT24C164-10SC-2.5 is also compliant with industry standards such as JEDEC, allowing for easier integration into existing systems. This helps to reduce development time, cost and complexity for users.

In conclusion, the AT24C164-10SC-2.5 is an advanced ferroelectric Random Access Memory that offers high data retention, fast access times, and is compatible with industry standards. This makes it suitable for a wide range of applications, from industrial, automotive and consumer applications, to mobile, embedded and adaptive systems.

The specific data is subject to PDF, and the above content is for reference