AT24C64-10PC-2.5

Write Cycle Time - Word, Page:	10ms
Base Part Number:	AT24C64
Supplier Device Package:	8-PDIP
Package / Case:	8-DIP (0.300", 7.62mm)
Mounting Type:	Through Hole
Operating Temperature:	0°C ~ 70°C (TA)
Voltage - Supply:	2.5 V ~ 5.5 V
Memory Interface:	I²C
Access Time:	900ns
Series:	--
Clock Frequency:	400kHz
Memory Size:	64Kb (8K x 8)
Technology:	EEPROM
Memory Format:	EEPROM
Memory Type:	Non-Volatile
Part Status:	Obsolete
Packaging:	Tube

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AT24C64-10PC-2.5

AT24C64-10PC-2.5 is a type of memory device and is part of the AT24C64 series of memory ICs. It is an Electrically Erasable Programmable Read-Only Memory (EEPROM) device with 64 kilobit (M bit) of storage capacity. It also features Electrostatic Discharge (ESD) protection up to ±8000Volts and is suitable for industrial, automotive, and aeronautical applications.

Application Field

The AT24C64-10PC-2.5 is ideal for implementing non-volatile memory storage solutions in industrial, automotive, and aeronautical applications. Its memory capacity is perfect for environment where large amounts of information is needed to be stored. It also boasts an impressive data retention of up to 200 years and its ESD protection prevents damage from voltage transients.With its industrial grade applications, it is perfect for any kind of memory keepsake. This includes storing sensitive factory settings, maintaining logbooks, and producing programmable objects, like portable kiosks, that require extensive information storage. In automotive applications, it can retain sensor calibration data and store serial numbers, while it can register aircraft hours in aeronautical applications.

Working Principle

The AT24C64-10PC-2.5 is a memory device that is based off EEPROM, which stands for Electrically Erasable Programmable Read-Only Memory. It utilizes a high-current pulse to create a high electric field which allows the electrons to break away from their bonds, leaving the cells on the chip in the “erased” state.To write to the memory, it changes the charges in the memory cells. This is done by applying a voltage in a bit-wise manner. The contents are stored using a two-state threshold voltage mechanism. Each cell is composed of a gate and a floating gate, where the gate is separated by an isolation layer. To write, a voltage is applied to the cell, and when a voltage is applied between the gate and the floating gate, electrons are drawn to the floating gate, thus creating a charge on the gate, which is stored as a voltage level.Erasure is done by setting up a high electric field, which is obtained by applying a pulse of high current. This has the effect of eliminating the charge in the gate, thus erasing the contents stored in the cell.

Conclusion

The AT24C64-10PC-2.5 is a type of memory device that is capable of storing 64 kilobit of data and provides an impressive data retention of up to 200 years. It is ideal for any kind of industrial, automotive, and aeronautical applications, where large amounts of information needs to be stored in a robust and reliable way. Based off EEPROM technology, the AT24C64-10PC-2.5 utilizes a two-state threshold voltage mechanism to write, and erasure is done by applying a pulse of high current to create a high electric field.

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