AT27BV010-90VC Allicdata Electronics
Allicdata Part #:

AT27BV010-90VC-ND

Manufacturer Part#:

AT27BV010-90VC

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC EPROM 1M PARALLEL 32VSOP
More Detail: EPROM - OTP Memory IC 1Mb (128K x 8) Parallel 90n...
DataSheet: AT27BV010-90VC datasheetAT27BV010-90VC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: --
Access Time: 90ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.488", 12.40mm Width)
Supplier Device Package: 32-VSOP
Base Part Number: AT27BV010
Description

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Memory

AT27BV010-90VC is an advanced and reliable non-volatile memory ideal for secure cryptographic key storage applications. This memory device is available in various densities, ranging from 1kB to 64kB.The AT27BV010-90VC is based on the block-erasable Single Transistor Sector Architecture (SETSP), a state-of-the-art nonvolatile memory technology.

Application Field

The AT27BV010-90VC is an ideal solution for storage of confidential data, authentication and encryption codes, personal identification information and other critical information. It provides an ultra-secure, self-protected solution, making it ideal for use in applications such as telecommunication services, mobile phones, moving displays, handheld devices and other applications requiring secure data storage and/or authentication.

Working Principle

The AT27BV010-90VC uses a Single Transistor Sector Architecture (SETSP). This innovative and reliable nonvolatile memory architecture is based on a single transistor connected in series to each sector. The Erase/Write operation is performed using the Fowler-Nordheim tunneling principle and a heat transfer mechanism through the transistor. To extend endurance and enable cost effectiveness, a sub set of data bits can be programmed to be non-erasable.

Each sector of the AT27BV010-90VC consists of 256 bytes of memory and is individually protected by the write protection latch. The write protection latch is non-volatile and can be set to a “write protect” mode to prevent further write operations to the entire sector. It is also protected against accidental disclosure or modification of stored data by the constant “write protect” signal.

Secure data protection is also provided by a unique address protection mechanism which prevents the content of any sector from being read or written unless the corresponding address is provided. The Address Protection feature is enabled on a sector-by-sector basis; or to all sectors simultaneously.

The AT27BV010-90VC offers a combination of reliable and robust performance, security, and endurance. It is capable of sustaining 10 million erase/write cycles with minimal degradation, making it ideal for applications with high write cycles. It also features low power requirements, fast re-programming time and an endurance of more than 10 years.

The specific data is subject to PDF, and the above content is for reference

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