AT27BV020-90TI

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	EPROM
Technology:	EPROM - OTP
Memory Size:	2Mb (256K x 8)
Write Cycle Time - Word, Page:	--
Access Time:	90ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
Operating Temperature:	-40°C ~ 85°C (TC)
Mounting Type:	Surface Mount
Package / Case:	32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	32-TSOP
Base Part Number:	AT27BV020

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The AT27BV020-90TI is a FLASH memory product from ATMEL, a leader in the embedded technology industry. It is a versatile, high-density FLASH memory device, designed for a wide variety of applications. This article will discuss the AT27BV020-90TI application field and working principle.

AT27BV020-90TI Application Field

The AT27BV020-90TI is a 2-Mbit FLASH memory device, available in JEDEC standard packages. It is ideal for applications requiring code storage and programmable data, such as embedded controllers, modems, and smart cards. The device offers industry-standard security features, allowing customers to protect their system’s code and data from unauthorized access.The device can be used as a user-programmable memory and allows for easy in-field upgrades, eliminating the need for customers to redesign or re-qualify their end-product. With its wide voltage range operation, the AT27BV020-90TI is suitable for systems operating from 3.0 to 5.5V.The AT27BV020-90TI is pin-compatible with most industry standard DIP-type FLASH memories, making it easy to migrate existing designs to the device. It is also highly reliable and offers extended reliability features such as block protection, sector locking, and lock-down capability.

AT27BV020-90TI Working Principle

The AT27BV020-90TI uses a non-volatile FLASH memory cell to store data. Each cell is composed of two transistors connected in series, one of which is the erase transistor and the other is the program transistor.The erase transistor stores the data in the cell and is programmed when a logic \'1\' is written to the cell. The program transistor stores the complement of the data and is programmed when a logic \'0\' is written to the cell. To write to the cell, both transistors must be programmed in one operation.During erase operations, the state of both transistors is changed to the \'0\' state. This is achieved by applying a high voltage on the wordline. The cell is erased when a high voltage on the bitline is applied, while the wordline is held in the erase standby state. The cell data is then written by applying a low voltage on the bitline and a high voltage on the wordline.

Conclusion

The AT27BV020-90TI is a 2-Mbit FLASH memory device from ATMEL, suitable for a wide variety of applications. Its wide voltage range operation, industry-standard security features, and pin-compatibility with other DIP-type FLASH memories make it an ideal choice for any embedded system. The device uses a non-volatile FLASH memory cell to store data and is programmed and erased with standard logic \'1\' and \'0\' signals, respectively.

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