AT27BV020-90VC Allicdata Electronics
Allicdata Part #:

AT27BV020-90VC-ND

Manufacturer Part#:

AT27BV020-90VC

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC EPROM 2M PARALLEL 32VSOP
More Detail: EPROM - OTP Memory IC 2Mb (256K x 8) Parallel 90n...
DataSheet: AT27BV020-90VC datasheetAT27BV020-90VC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 2Mb (256K x 8)
Write Cycle Time - Word, Page: --
Access Time: 90ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.488", 12.40mm Width)
Supplier Device Package: 32-VSOP
Base Part Number: AT27BV020
Description

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The AT27BV020-90VC is a two megabit CMOS electrically erasable programmable read-only memory (EEPROM) device. This device is ideal for use in applications that require reprogramming without a complete power cycle design. It is suitable for use in a variety of electronic applications.

The AT27BV020-90VC has seven address/data bits, a control pin for selecting between Read and Write modes and a 1-pin write enable pin. The device features an indirect addressing command byte and a 1-bit error flag to inform users if the write operation has failed. Additionally, the AT27BV020-90VC has seven erase/program modes for greater flexibility. The device has low power consumption (<2 mA read or write current max) and supports a wide range of programming voltages from 1.8V to 5.5V.

The AT27BV020-90VC is highly reliable and offers a Data Retention of 10 years and over 10,000 write/erase cycles. This make it extremely suitable for applications where frequent reprogramming and reliable data storage is needed. Possible applications include address labels/stickers, electronic signs, watches, ID tags, RFID tags, automotive systems and other industrial applications.

The AT27BV020-90VC EEPROM works using Fowler-Nordheim tunneling of electrons into the floating gate of the device. A positive voltage is applied to the control gate to allow electrons to tunnel through the thin oxide layer and onto the floating gate. The electrons trapped on the floating gate cause the threshold voltage of the device to increase, resulting in a logical 1. To erase the device, a negative voltage is applied to the control gate thereby depleting electrons from the floating gate and resulting in a logical 0.

The AT27BV020-90VC is a reliable and cost-effective solution for applications that require frequently updated data. It has low power consumption, high endurance and data retention, making it an ideal choice for a variety of applications. Overall, the AT27BV020-90VC makes an excellent choice for applications that require reprogrammable EEPROM storage.

The specific data is subject to PDF, and the above content is for reference

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