AT29BV040A-25JC Allicdata Electronics
Allicdata Part #:

AT29BV040A-25JC-ND

Manufacturer Part#:

AT29BV040A-25JC

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC FLASH 4M PARALLEL 32PLCC
More Detail: FLASH Memory IC 4Mb (512K x 8) Parallel 250ns 32-...
DataSheet: AT29BV040A-25JC datasheetAT29BV040A-25JC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: 20ms
Access Time: 250ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC
Base Part Number: AT29BV040
Description

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AT29BV040A-25JC Memory Application Field and Working Principle

The AT29BV040A-25JC is an electrically programmable read-only memory (EPROM) that can be used as a dependable, long lasting form of memory storage. It is a non-volatile memory device that stores data permanently, even when the power supply is disconnected or interrupted. AT29BV040A-25JC offers quick and reliable access to stored data and can be used in many applications requiring permanent storage of data.

Application Fields

The AT29BV040A-25JC is frequently used in applications where long lasting, permanent data storage is required. These include industrial control systems, medical devices and instrumentation, aerospace, automotive systems, and consumer electronics, among many others. The device is highly stable, making it suitable for these applications that require extreme temperature and pressure environments.

A frequent use of the AT29BV040A-25JC is in microcontrollers, where it stores permanent information. This includes boot code and other non-volatile data that are used for configuration or other control purposes. Some modern microcontrollers also use EPROM technology for program memory.

Working Principle

The working principle of the AT29BV040A-25JC EPROM is simple but effective. The basic device is made up of a silicon chip, which contains cells with a field oxide layer. These cells can be programmed and erased electronically by the user when certain voltage levels are applied.

To program a memory cell, the device is set to programming mode and a voltage is applied to the field oxide layer. This in turn causes an increase in the threshold voltage of the program cell. To erase the cell, the device is set to erase mode and a higher voltage is applied to the field oxide layer, causing the threshold voltage to decrease. This process can be completed multiple times, allowing the device to store multiple pieces of programming data.

The data stored in the device is retained even when the power is off. This makes the device ideal for applications that need data to be kept safe and secure even when the power supply is disconnected or interrupted. The AT29BV040A-25JC is also immune to environmental factors such as extreme temperature, making it suitable for a variety of usage scenarios.

Conclusion

The AT29BV040A-25JC is an advanced and dependable form of non-volatile memory. It has a wide range of applications where long lasting, permanent data storage is required, and is highly stable and immune to environmental factors. The device works by applying certain voltages to the field oxide layer of its silicon chip, which allows it to store and retain data even when the power is off. It is a reliable and efficient form of memory storage, ideal for many different applications.

The specific data is subject to PDF, and the above content is for reference

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