AT29C020-70TU Allicdata Electronics
Allicdata Part #:

AT29C020-70TU-ND

Manufacturer Part#:

AT29C020-70TU

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC FLASH 2M PARALLEL 32TSOP
More Detail: FLASH Memory IC 2Mb (256K x 8) Parallel 70ns 32-T...
DataSheet: AT29C020-70TU datasheetAT29C020-70TU Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (256K x 8)
Write Cycle Time - Word, Page: 10ms
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP
Base Part Number: AT29C020
Description

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Memory is an essential component to many types of computer systems and is responsible for data and instruction storage. One type of memory is the AT29C020-70TU. This device is a 32K CMOS 2048 x 8 bit Electrically Erasable Programmable Read-Only Memory (EEPROM). It features low active power, low standby power, and wide range of operating voltages. Below is a further exploration of the application fields used for this device and its working principle.

Application Fields

This device is used in a variety of applications such as embedded data control systems and in intelligent instrumentation. This type of memory device has some impressive performance characteristics that make it well-suited for many systems. Specifically, the AT29C020-70TU offers fast write-time (5ms/word), primary and expanded addresses, and endurance of 10,000 read cycles. Not to mention, it has a maximum data access time of 70ns and is programmable in-system. The device is also able to automatically switch between a 4x power supply and a 5V power supply.

Working Principle

This EEPROM memory device works using electrical charges to either write or erase data from a memory cell. The device is non-volatile, meaning that data is retained even in the absence of power, however, it is necessary to use high voltage (+12V) to write or erase the device. The process of writing utilizes Fowler-Nordheim tunneling of electrons through the oxide layer of the device. This causes a shift in the electrical properties of the cell (e.g. charge).

The device can be used for reading, writing, erasing, and verifying of data. For example, a signal is sent from the controller to the device in order to write data to the cells. This signal is sent via the address and data buses. Furthermore, the device is able to be powered from either a 4x power supply (3.0V to 5.5V) or a True+5V power supply. This provides users with added flexibility for when the device is being used in the field.

Conclusion

The AT29C020-70TU is a 32K CMOS EEPROM device that offers a wide range of powerful functionalities. It is able to function with a variety of different operating voltages and boasts impressive write-times, data access times, and endurance. Furthermore, users have the added flexibility of being able to use the device with either a 4x power supply or a True+5V power supply. In terms of application fields, this device is used in a variety of settings, such as embedded data control systems and intelligent instrumentation. It is able to write/erase data using electrical charges and works using Fowler-Nordheim tunneling of electrons.

The specific data is subject to PDF, and the above content is for reference

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