AT29LV512-15TU-T Allicdata Electronics
Allicdata Part #:

AT29LV512-15TU-T-ND

Manufacturer Part#:

AT29LV512-15TU-T

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC FLASH 512K PARALLEL 32TSOP
More Detail: FLASH Memory IC 512Kb (64K x 8) Parallel 150ns 32...
DataSheet: AT29LV512-15TU-T datasheetAT29LV512-15TU-T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 512Kb (64K x 8)
Write Cycle Time - Word, Page: 20ms
Access Time: 150ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP
Base Part Number: AT29LV512
Description

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Memory plays an important role in modern electronic devices. AT29LV512-15TU-T is a 512Kb non-volatile memory solution that is widely used in a variety of applications. It is an ideal choice for applications that require high reliability and data retention, as well as low power consumption and cost. This article will cover the application fields and working principles of AT29LV512-15TU-T.

Application Field: The AT29LV512-15TU-T is used in many different applications. It is widely used in aviation, aerospace, and military applications where reliability is paramount. It is also used in automotive applications that require high durability and dependability. In addition, it is used in consumer, industrial, and medical applications that need a high degree of data storage and retrieval. As a result, this memory solution is suitable for applications that require high reliability, low power consumption, and cost effectiveness.

Working Principle: The AT29LV512-15TU-T is an EEPROM device with a unique design that allows it to store and retrieve data quickly and efficiently. It is a three-wire EEPROM device that operates according to the industry standard 19-bit command set. The device is carfully designed to ensure optimal operation and reliability. The memory contents are stored in 16-word blocks at addresses 00000h - FFFFFh. Data is written or read in page or individual byte formats. When a page write is performed, the entire page is written in one operation. When an individual byte is written, the entire memory page is first erased, then the selected byte is written. The read cycle is performed in a single operation.

The device is also designed with a number of features that further ensure its reliability. It has a lock bit for the block erase operation, an erase enable bit, and a write enable bit. The erase enable bit must be set during a block erase operation, and the write enable must be set for any write operation. These bits are set during the reset operation, but can be toggled by the user for selective erasing or writing. The block erase operation will erase all 16 words in the block, and the write operation will write one byte at a time.

In addition, the device also has an endurance cycle feature. This feature allows the memory contents to be retained after many write and erase cycles, ensuring reliable operation. The endurance cycle is determined by the number of write and erase cycles, and the amount of time between each cycle. The device can be subjected to up to 100,000 write and erase cycles without significant memory loss.

Conclusion: AT29LV512-15TU-T is an ideal choice for applications that require high reliability, low power consumption, and cost effectiveness. It is widely used in aviation, aerospace, and military applications, as well as automotive and consumer applications. Its three-wire design ensures optimal operation and reliability, while its endurance cycle ensures that it can operate reliably through many write and erase cycles. In conclusion, AT29LV512-15TU-T is an ideal memory solution for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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